A new integrated fluorescence-detection hybrid device with a photodiode and an organic light-emitting diode (OLED), and its characteristics are presented. To detect the fluorescent signal using OLED as a light source, a finger-type photodiode with low parasitic resistance was designed, which utilizes the side depletion region in the p+n junction. In addition, OLED was designed to have the peak intensity at an excitation wavelength from rhodamine 6G. The integrated fluorescence-detection hybrid device fabricated had a background signal of 153 nA and a limit of detection of 1 μM, and was applied in the competitive assay.
Bibliographical noteFunding Information:
Manuscript received April 28, 2006; revised June 19, 2006. This work was supported by the Intelligent Microsystem Center, which carries out one of the 21st century’s Frontier R&D Projects sponsored by the Korea Ministry of Commerce, Industry and Energy. The review of this letter was arranged by Editor P. Yu.
- Organic light-emitting diode (OLED)
- P-type intrinsic n-type (p-i-n) diode
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering