Characterization of (Ba0.65Sr0.35)(Ti0.65Zr0.35)O3 thin film

Jae Dong Byun, Jung Il Yoon, Sahn Nahm, Jin Cheol Kim

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


The crystal structure and dielectric properties of (Ba0.65Sr0.35)(Ti0.65Zr0.35)O3 (BSTZ) films were investigated. The films were deposited on Pt/Ti/SiO2/Si(100) substrates by metal-organic decomposition (MOD) method and rf magnetron sputtering. The crystal structure of the BSTZ film was cubic perovskite, and the preferred orientation of the film varied with annealing temperature. The MOD film annealed at 750 °C exhibited excellent dielectric properties of dielectric constant, k≈1,000 and dissipation factor, tan δ≤0.04. The films also showed a very stable leakage current behavior vs. applied field. The leakage current density, J, increased smoothly with field, up to E = 0.3 MV/cm, and was 3.47×10-7 A/cm2 at 1.25 V.

Original languageEnglish
Pages (from-to)1755-1761
Number of pages7
JournalMaterials Research Bulletin
Issue number11
Publication statusPublished - 2000 Aug

Bibliographical note

Copyright 2017 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Characterization of (Ba0.65Sr0.35)(Ti0.65Zr0.35)O3 thin film'. Together they form a unique fingerprint.

Cite this