Characterization of (Ba0.65Sr0.35)(Ti0.65Zr0.35)O3 thin film

Jae Dong Byun; Jung Il Yoon; Sahn Nahm; Jin Cheol Kim

doi:10.1016/S0025-5408(00)00390-1

Characterization of (Ba_0.65Sr_0.35)(Ti_0.65Zr_0.35)O₃ thin film

Jae Dong Byun, Jung Il Yoon, Sahn Nahm, Jin Cheol Kim

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The crystal structure and dielectric properties of (Ba_0.65Sr_0.35)(Ti_0.65Zr_0.35)O₃ (BSTZ) films were investigated. The films were deposited on Pt/Ti/SiO₂/Si(100) substrates by metal-organic decomposition (MOD) method and rf magnetron sputtering. The crystal structure of the BSTZ film was cubic perovskite, and the preferred orientation of the film varied with annealing temperature. The MOD film annealed at 750 °C exhibited excellent dielectric properties of dielectric constant, k≈1,000 and dissipation factor, tan δ≤0.04. The films also showed a very stable leakage current behavior vs. applied field. The leakage current density, J, increased smoothly with field, up to E = 0.3 MV/cm, and was 3.47×10^-7 A/cm² at 1.25 V.

Original language	English
Pages (from-to)	1755-1761
Number of pages	7
Journal	Materials Research Bulletin
Volume	35
Issue number	11
DOIs	https://doi.org/10.1016/S0025-5408(00)00390-1
Publication status	Published - 2000 Aug

Bibliographical note

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Copyright 2017 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/S0025-5408(00)00390-1

Cite this

@article{29887408ee61438fa53fafe83b48b307,

title = "Characterization of (Ba0.65Sr0.35)(Ti0.65Zr0.35)O3 thin film",

abstract = "The crystal structure and dielectric properties of (Ba0.65Sr0.35)(Ti0.65Zr0.35)O3 (BSTZ) films were investigated. The films were deposited on Pt/Ti/SiO2/Si(100) substrates by metal-organic decomposition (MOD) method and rf magnetron sputtering. The crystal structure of the BSTZ film was cubic perovskite, and the preferred orientation of the film varied with annealing temperature. The MOD film annealed at 750 °C exhibited excellent dielectric properties of dielectric constant, k≈1,000 and dissipation factor, tan δ≤0.04. The films also showed a very stable leakage current behavior vs. applied field. The leakage current density, J, increased smoothly with field, up to E = 0.3 MV/cm, and was 3.47×10-7 A/cm2 at 1.25 V.",

author = "Byun, {Jae Dong} and Yoon, {Jung Il} and Sahn Nahm and Kim, {Jin Cheol}",

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T1 - Characterization of (Ba0.65Sr0.35)(Ti0.65Zr0.35)O3 thin film

AU - Byun, Jae Dong

AU - Yoon, Jung Il

AU - Nahm, Sahn

AU - Kim, Jin Cheol

PY - 2000/8

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N2 - The crystal structure and dielectric properties of (Ba0.65Sr0.35)(Ti0.65Zr0.35)O3 (BSTZ) films were investigated. The films were deposited on Pt/Ti/SiO2/Si(100) substrates by metal-organic decomposition (MOD) method and rf magnetron sputtering. The crystal structure of the BSTZ film was cubic perovskite, and the preferred orientation of the film varied with annealing temperature. The MOD film annealed at 750 °C exhibited excellent dielectric properties of dielectric constant, k≈1,000 and dissipation factor, tan δ≤0.04. The films also showed a very stable leakage current behavior vs. applied field. The leakage current density, J, increased smoothly with field, up to E = 0.3 MV/cm, and was 3.47×10-7 A/cm2 at 1.25 V.

AB - The crystal structure and dielectric properties of (Ba0.65Sr0.35)(Ti0.65Zr0.35)O3 (BSTZ) films were investigated. The films were deposited on Pt/Ti/SiO2/Si(100) substrates by metal-organic decomposition (MOD) method and rf magnetron sputtering. The crystal structure of the BSTZ film was cubic perovskite, and the preferred orientation of the film varied with annealing temperature. The MOD film annealed at 750 °C exhibited excellent dielectric properties of dielectric constant, k≈1,000 and dissipation factor, tan δ≤0.04. The films also showed a very stable leakage current behavior vs. applied field. The leakage current density, J, increased smoothly with field, up to E = 0.3 MV/cm, and was 3.47×10-7 A/cm2 at 1.25 V.

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