Characterization of bulk GaN crystals grown from solution at near atmospheric pressure

N. Y. Garces, B. N. Feigelson, J. A. Freitas, Jihyun Kim, R. Myers-Ward, E. R. Glaser

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10 Citations (Scopus)


The properties of GaN crystals grown from solution at temperatures ranging from 780 to 810 °C and near atmospheric pressure ∼0.14 MPa, have been investigated using low temperature X-band (∼9.5 GHz) electron paramagnetic resonance spectroscopy, micro-Raman spectroscopy, photoluminescense spectroscopy, and photoluminescence imaging. Our samples are spontaneously nucleated thin platelets of approximate dimensions of 2×2×0.025 mm3, or samples grown on both polycrystalline and single crystal HVPE large-area (∼3×8×0.5 mm3) seeds. Electron paramagnetic resonance spectra consists of a single Lorentzian line with axial symmetry about the c-axis, with approximate g-values, g=1.951 and g=1.948 and a peak-to-peak linewidth of∼4.0 G. This resonance has been previously assigned to shallow impurity donors/conduction electrons in GaN and attributed to Si- and/or O impurities. Room temperature photoluminescence and photoluminescence imaging data from both Ga- and N-faces show different dominant emission bands, suggesting different incorporation of impurities and/or native defects. Raman scattering and X-ray diffraction show moderate to good crystalline quality.

Original languageEnglish
Pages (from-to)2558-2563
Number of pages6
JournalJournal of Crystal Growth
Issue number18
Publication statusPublished - 2010 Sept 1


  • A1. Characterization
  • B1. Nitrides
  • B2. Semiconducting IIIV materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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