Characterization of CVD diamond film and diamond-tip field emitter array for FED applications

Byeong Kwon Ju; Seong Jin Kim; Yun Hi Lee; Beom Soo Park; Young Joon Baik; Sungkyoo Lim; Myung Hwan Oh

Characterization of CVD diamond film and diamond-tip field emitter array for FED applications

Byeong Kwon Ju^*
, Seong Jin Kim
, Yun Hi Lee
, Beom Soo Park
, Young Joon Baik
, Sungkyoo Lim
, Myung Hwan Oh

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

Diamond-tip field emitter arrays and a flat diamond films were fabricated and characterized. The tip radius of 300 angstroms was obtained by using a silicon mold formed by orientation dependent etching (ODE). The fabricated diamond-tip array was identified as diamond from Raman spectroscopy. Emission current of 200 μA and threshold voltage of 600 V were obtained for the diamond-tip field emitter arrays from the current-voltage measurement. Emission current of 6 μA and threshold voltage of 800 V were obtained from the flat diamond film deposited under the same condition as diamond-tip field emitter arrays. The diamond-tip field emitter arrays were shown to have better electrical characteristics than the flat diamond films.

Original language	English
Pages	530-533
Number of pages	4
Publication status	Published - 1996
Event	Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia Duration: 1996 Jul 7 → 1996 Jul 12

Other

Other	Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
City	St.Petersburg, Russia
Period	96/7/7 → 96/7/12

ASJC Scopus subject areas

Surfaces and Interfaces

Cite this

@conference{29e62ae822bc4643a009f01370eeb7da,

title = "Characterization of CVD diamond film and diamond-tip field emitter array for FED applications",

abstract = "Diamond-tip field emitter arrays and a flat diamond films were fabricated and characterized. The tip radius of 300 angstroms was obtained by using a silicon mold formed by orientation dependent etching (ODE). The fabricated diamond-tip array was identified as diamond from Raman spectroscopy. Emission current of 200 μA and threshold voltage of 600 V were obtained for the diamond-tip field emitter arrays from the current-voltage measurement. Emission current of 6 μA and threshold voltage of 800 V were obtained from the flat diamond film deposited under the same condition as diamond-tip field emitter arrays. The diamond-tip field emitter arrays were shown to have better electrical characteristics than the flat diamond films.",

author = "Ju, \{Byeong Kwon\} and Kim, \{Seong Jin\} and Lee, \{Yun Hi\} and Park, \{Beom Soo\} and Baik, \{Young Joon\} and Sungkyoo Lim and Oh, \{Myung Hwan\}",

year = "1996",

language = "English",

pages = "530--533",

note = "Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC ; Conference date: 07-07-1996 Through 12-07-1996",

}

TY - CONF

T1 - Characterization of CVD diamond film and diamond-tip field emitter array for FED applications

AU - Ju, Byeong Kwon

AU - Kim, Seong Jin

AU - Lee, Yun Hi

AU - Park, Beom Soo

AU - Baik, Young Joon

AU - Lim, Sungkyoo

AU - Oh, Myung Hwan

PY - 1996

Y1 - 1996

N2 - Diamond-tip field emitter arrays and a flat diamond films were fabricated and characterized. The tip radius of 300 angstroms was obtained by using a silicon mold formed by orientation dependent etching (ODE). The fabricated diamond-tip array was identified as diamond from Raman spectroscopy. Emission current of 200 μA and threshold voltage of 600 V were obtained for the diamond-tip field emitter arrays from the current-voltage measurement. Emission current of 6 μA and threshold voltage of 800 V were obtained from the flat diamond film deposited under the same condition as diamond-tip field emitter arrays. The diamond-tip field emitter arrays were shown to have better electrical characteristics than the flat diamond films.

AB - Diamond-tip field emitter arrays and a flat diamond films were fabricated and characterized. The tip radius of 300 angstroms was obtained by using a silicon mold formed by orientation dependent etching (ODE). The fabricated diamond-tip array was identified as diamond from Raman spectroscopy. Emission current of 200 μA and threshold voltage of 600 V were obtained for the diamond-tip field emitter arrays from the current-voltage measurement. Emission current of 6 μA and threshold voltage of 800 V were obtained from the flat diamond film deposited under the same condition as diamond-tip field emitter arrays. The diamond-tip field emitter arrays were shown to have better electrical characteristics than the flat diamond films.

UR - https://www.scopus.com/pages/publications/0030365115

M3 - Paper

AN - SCOPUS:0030365115

SP - 530

EP - 533

T2 - Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC

Y2 - 7 July 1996 through 12 July 1996

ER -

Characterization of CVD diamond film and diamond-tip field emitter array for FED applications

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ASJC Scopus subject areas

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