Characterization of dual floating gate memory devices constructed on glass

Sungsu Kim, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticlepeer-review


The performance of dual floating gate memory devices constructed on glass is examined in this study. The dual floating gate memory device is composed of a ZnO transistor with a bottom-gate oxide layer whose two laterally separated regions are embedded with Al nanoparticles. For the memory device, four different states are achieved through FowlerNordheim (FN) tunneling and channel hot electron (CHE) injection. Each of these four different states is distinguished by a difference of about 0.5 V in the threshold voltage shift. A detailed description on the four-state operation is given in this paper.

Original languageEnglish
Pages (from-to)151-154
Number of pages4
JournalSolid State Communications
Issue number2
Publication statusPublished - 2011 Jan

Bibliographical note

Funding Information:
This work was supported by the IT R&D program of MKE/KEIT [10030559, Development of next generation high performance organic/nano materials and printing process technology], the Nano R&D Program (M10703000980-08M0300-98010), World Class University (WCU, R32-2008-000-10082-0) Project of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation), and Hynix-Korea University Nano-Semiconductor Program.


  • A. Aluminum nanoparticles
  • C. Dual-floating gate memory
  • E. 2-bit operation

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry


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