Characterization of erbium chloride seeded gallium nitride nanocrystals

J. Ahn; M. A. Mastro; J. A. Freitas; H. Y. Kim; R. T. Holm; C. R. Eddy; J. Hite; S. I. Maximenko; J. Kim

doi:10.1016/j.tsf.2008.08.170

Characterization of erbium chloride seeded gallium nitride nanocrystals

J. Ahn, M. A. Mastro, J. A. Freitas, H. Y. Kim, R. T. Holm, C. R. Eddy, J. Hite, S. I. Maximenko, J. Kim

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A novel erbium chloride seeded growth process was developed for the growth and fabrication of erbium doped GaN nanocrystals. This erbium chloride seeded technique simplifies the delivery of erbium into a metal organic chemical vapor deposition system. Additionally, this selective growth of the GaN nanocrystal only occurred in the presence of the ErCl₃ seed. Strong green emission, distinctive of the Er³⁺ ion, was observed in the GaN nanocrystals.

Original language	English
Pages (from-to)	1111-1114
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	3
DOIs	https://doi.org/10.1016/j.tsf.2008.08.170
Publication status	Published - 2008 Dec 1

Bibliographical note

Funding Information:
Research at the Naval Research Lab is supported by the Office of Naval Research and ONR-Global (N00014-07-1-4035); Support for J.K. was partially provided by the Brain Korea 21 program.

Keywords

Gallium
Nanocrystal
Nitrides
Phonon

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2008.08.170

Cite this

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title = "Characterization of erbium chloride seeded gallium nitride nanocrystals",

abstract = "A novel erbium chloride seeded growth process was developed for the growth and fabrication of erbium doped GaN nanocrystals. This erbium chloride seeded technique simplifies the delivery of erbium into a metal organic chemical vapor deposition system. Additionally, this selective growth of the GaN nanocrystal only occurred in the presence of the ErCl3 seed. Strong green emission, distinctive of the Er3+ ion, was observed in the GaN nanocrystals.",

keywords = "Gallium, Nanocrystal, Nitrides, Phonon",

author = "J. Ahn and Mastro, {M. A.} and Freitas, {J. A.} and Kim, {H. Y.} and Holm, {R. T.} and Eddy, {C. R.} and J. Hite and Maximenko, {S. I.} and J. Kim",

note = "Funding Information: Research at the Naval Research Lab is supported by the Office of Naval Research and ONR-Global (N00014-07-1-4035); Support for J.K. was partially provided by the Brain Korea 21 program.",

year = "2008",

month = dec,

day = "1",

doi = "10.1016/j.tsf.2008.08.170",

language = "English",

volume = "517",

pages = "1111--1114",

journal = "Thin Solid Films",

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T1 - Characterization of erbium chloride seeded gallium nitride nanocrystals

AU - Ahn, J.

AU - Mastro, M. A.

AU - Freitas, J. A.

AU - Kim, H. Y.

AU - Holm, R. T.

AU - Eddy, C. R.

AU - Hite, J.

AU - Maximenko, S. I.

AU - Kim, J.

N1 - Funding Information: Research at the Naval Research Lab is supported by the Office of Naval Research and ONR-Global (N00014-07-1-4035); Support for J.K. was partially provided by the Brain Korea 21 program.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - A novel erbium chloride seeded growth process was developed for the growth and fabrication of erbium doped GaN nanocrystals. This erbium chloride seeded technique simplifies the delivery of erbium into a metal organic chemical vapor deposition system. Additionally, this selective growth of the GaN nanocrystal only occurred in the presence of the ErCl3 seed. Strong green emission, distinctive of the Er3+ ion, was observed in the GaN nanocrystals.

AB - A novel erbium chloride seeded growth process was developed for the growth and fabrication of erbium doped GaN nanocrystals. This erbium chloride seeded technique simplifies the delivery of erbium into a metal organic chemical vapor deposition system. Additionally, this selective growth of the GaN nanocrystal only occurred in the presence of the ErCl3 seed. Strong green emission, distinctive of the Er3+ ion, was observed in the GaN nanocrystals.

KW - Gallium

KW - Nanocrystal

KW - Nitrides

KW - Phonon

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U2 - 10.1016/j.tsf.2008.08.170

DO - 10.1016/j.tsf.2008.08.170

M3 - Article

AN - SCOPUS:56649089689

SN - 0040-6090

VL - 517

SP - 1111

EP - 1114

JO - Thin Solid Films

JF - Thin Solid Films

IS - 3

ER -

Characterization of erbium chloride seeded gallium nitride nanocrystals

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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