Characterization of erbium chloride seeded gallium nitride nanocrystals

  • J. Ahn
  • , M. A. Mastro*
  • , J. A. Freitas
  • , H. Y. Kim
  • , R. T. Holm
  • , C. R. Eddy
  • , J. Hite
  • , S. I. Maximenko
  • , J. Kim
  • *Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Abstract

    A novel erbium chloride seeded growth process was developed for the growth and fabrication of erbium doped GaN nanocrystals. This erbium chloride seeded technique simplifies the delivery of erbium into a metal organic chemical vapor deposition system. Additionally, this selective growth of the GaN nanocrystal only occurred in the presence of the ErCl3 seed. Strong green emission, distinctive of the Er3+ ion, was observed in the GaN nanocrystals.

    Original languageEnglish
    Pages (from-to)1111-1114
    Number of pages4
    JournalThin Solid Films
    Volume517
    Issue number3
    DOIs
    Publication statusPublished - 2008 Dec 1

    Bibliographical note

    Funding Information:
    Research at the Naval Research Lab is supported by the Office of Naval Research and ONR-Global (N00014-07-1-4035); Support for J.K. was partially provided by the Brain Korea 21 program.

    Keywords

    • Gallium
    • Nanocrystal
    • Nitrides
    • Phonon

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Materials Chemistry

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