Abstract
High-quality GaN nanowires have been synthesized by applying the laser ablation method. FE-SEM, XRD, HR-TEM, and EDX measurements show that the GaN nanowires are single crystals prepared through the vapor-liquid-solid growth mechanism. The light emitting devices (LEDs) with the structure of ITO-coated glass/PEDOT:PSS/GaN nanowire-PVK nanocomposites/DCM-doped Alq3/Li:Al have been fabricated and examined together with the investigations of luminescence and device characteristics.
Original language | English |
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Pages (from-to) | 743-744 |
Number of pages | 2 |
Journal | Synthetic Metals |
Volume | 135-136 |
DOIs | |
Publication status | Published - 2003 Apr 4 |
Keywords
- Alq
- Electroluminescence
- GaN nanowire
- Light emitting device
- Photoluminescence
- Polyvinylcarbazole
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry