Abstract
The high-resistivity polycrystalline CdZnTe thick films are grown by thermal evaporation method. The electrical properties of polycrystalline CdZnTe having high resistivity were investigated using time of flight technique. We have measured the average drift mobility and mobility lifetime of polycrystalline CdZnTe. In the comparison of annealed samples at different conditions, the variation of resistivity in the polycrystalline CdZnTe is considered to be related to the fluctuation of carrier concentration. From the analysis of transient photocurrent of time of flight based on multiple trapping model, we have found that the two dominant localized states which is considered to be related to the Cd vacancy (Ev + 0.36 eV), and grain boundary defects (Ev + 0.75 eV) play a dominant role in increasing resistivity through compensation process.
Original language | English |
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Pages (from-to) | 3094-3097 |
Number of pages | 4 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 51 |
Issue number | 6 I |
DOIs | |
Publication status | Published - 2004 Dec |
Bibliographical note
Funding Information:Manuscript received November 15, 2003; revised February 27, 2004 and August 16, 2004. This work was supported by the Korea Science and Engineering Foundation under Grant R01-2002-000-00271-0. K. H. Kim, Y. H. Na, Y. J. Park, S. U. Kim, and J. K. Hong are with Department of Physics, Korea University, Seoul 136-701, Korea (e-mail: [email protected]). T. R. Jung is with DXM, Gyunggido, 411-722, Korea (e-mail: [email protected]). Digital Object Identifier 10.1109/TNS.2004.839084
Keywords
- CdZnTe
- Charge collection efficiency
- High resistivity
- Polycrystalline
- Thermal evaporation method
- Time of flight (TOF)
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering