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Characterization of high-resistivity poly-CdZnTe thick films grown by thermal evaporation method
K. H. Kim
*
, Y. H. Na
, Y. J. Park
, T. R. Jung
, S. U. Kim
, J. K. Hong
*
Corresponding author for this work
Research output
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Contribution to journal
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Article
›
peer-review
38
Citations (Scopus)
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Keyphrases
Annealing
33%
Cadmium Telluride
100%
Carrier Concentration
33%
Cd Vacancy
33%
CdZnTe Thick Film
100%
Compensation Process
33%
Dominant Role
33%
Drift Mobility
33%
Electrical Properties
33%
Grain Boundary Defects
33%
High Resistivity
100%
Localized States
33%
Mobility-lifetime Product
33%
Multiple Trapping Model
33%
Resistivity
66%
Thermal Evaporation Method
100%
Time-of-flight Technique
33%
Transient Photocurrent
33%
Engineering
Carrier Concentration
25%
Grain Boundaries
25%
Localized State
25%
Photocurrent
25%
Polycrystalline
100%
Time-of-Flight
50%
Transients
25%
Material Science
Carrier Concentration
20%
Electrical Resistivity
100%
Grain Boundaries
20%
Thick Films
100%