Characterization of loss-coupled 1550 nm DFB lasers for microwave optical links

J. H. Han; Z. Lhee; S. W. Park

doi:10.1007/s00340-006-2402-z

Characterization of loss-coupled 1550 nm DFB lasers for microwave optical links

J. H. Han, Z. Lhee, S. W. Park

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A loss-coupled 1550 nm distributed feedback (DFB) laser diode with automatically buried absorptive InAsP layer for the application to radio-over-fiber network was experimentally investigated where the automatically buried layer in the epitaxial growth reduced the process steps in loss-coupled DFB laser fabrication. It showed linearity in electro-optical conversion characteristics with reduced third order intermodulation distortion of -70 dBc which is comparable to the previous results of DFB lasers as the optical power increases to 5 mW under two-tone test at 1.8 GHz bands.

Original language	English
Pages (from-to)	85-88
Number of pages	4
Journal	Applied Physics B: Lasers and Optics
Volume	85
Issue number	1
DOIs	https://doi.org/10.1007/s00340-006-2402-z
Publication status	Published - 2006 Oct
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)
General Physics and Astronomy

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abstract = "A loss-coupled 1550 nm distributed feedback (DFB) laser diode with automatically buried absorptive InAsP layer for the application to radio-over-fiber network was experimentally investigated where the automatically buried layer in the epitaxial growth reduced the process steps in loss-coupled DFB laser fabrication. It showed linearity in electro-optical conversion characteristics with reduced third order intermodulation distortion of -70 dBc which is comparable to the previous results of DFB lasers as the optical power increases to 5 mW under two-tone test at 1.8 GHz bands.",

author = "Han, {J. H.} and Z. Lhee and Park, {S. W.}",

year = "2006",

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AB - A loss-coupled 1550 nm distributed feedback (DFB) laser diode with automatically buried absorptive InAsP layer for the application to radio-over-fiber network was experimentally investigated where the automatically buried layer in the epitaxial growth reduced the process steps in loss-coupled DFB laser fabrication. It showed linearity in electro-optical conversion characteristics with reduced third order intermodulation distortion of -70 dBc which is comparable to the previous results of DFB lasers as the optical power increases to 5 mW under two-tone test at 1.8 GHz bands.

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Characterization of loss-coupled 1550 nm DFB lasers for microwave optical links

Abstract

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