TY - JOUR
T1 - Characterization of MBE-grown II-VI semiconductor distributed Bragg reflectors
AU - Peiris, F. C.
AU - Lee, S.
AU - Bindley, U.
AU - Furdyna, J. K.
AU - Stuckey, A. M.
AU - Martin, M. R.
AU - Buschert, J. R.
N1 - Funding Information:
We would like to thank M. Kim and C. Kim for their help in obtaining the PL results. This work was supported by the National Science Foundation Grant DMR97-05064.
PY - 1999/5
Y1 - 1999/5
N2 - We have grown distributed Bragg reflectors (DBRs) using two different combinations of II-VI semiconductor materials: ZnSe/Zn0.84Mg0.16S0.07Se0.93 and ZnSe/ZnTe. The nearly lattice matched ZnSeZnMgSSe system showed a reflectivity maximum near 470 nm, but only with the modest value of 70%. The strained ZnSe/ZnTe system, on the other hand, has over 90% reflectivity near 725 nm. Furthermore, the higher reflectivity in the ZnSe/ZnTe system is achieved with only 15 periods, compared to the 50 periods in the ZnSe/ZnMgSSe system. It is also found that the ZnSe/ZnTe system produces a stop band nearly 5 times wider than the ZnSe/ZnMgSSe system.
AB - We have grown distributed Bragg reflectors (DBRs) using two different combinations of II-VI semiconductor materials: ZnSe/Zn0.84Mg0.16S0.07Se0.93 and ZnSe/ZnTe. The nearly lattice matched ZnSeZnMgSSe system showed a reflectivity maximum near 470 nm, but only with the modest value of 70%. The strained ZnSe/ZnTe system, on the other hand, has over 90% reflectivity near 725 nm. Furthermore, the higher reflectivity in the ZnSe/ZnTe system is achieved with only 15 periods, compared to the 50 periods in the ZnSe/ZnMgSSe system. It is also found that the ZnSe/ZnTe system produces a stop band nearly 5 times wider than the ZnSe/ZnMgSSe system.
UR - http://www.scopus.com/inward/record.url?scp=0032667085&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(98)01520-6
DO - 10.1016/S0022-0248(98)01520-6
M3 - Conference article
AN - SCOPUS:0032667085
SN - 0022-0248
VL - 201
SP - 1040
EP - 1043
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
T2 - Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X)
Y2 - 31 August 1998 through 4 September 1998
ER -