Characterization of MBE-grown II-VI semiconductor distributed Bragg reflectors

F. C. Peiris; S. Lee; U. Bindley; J. K. Furdyna; A. M. Stuckey; M. R. Martin; J. R. Buschert

doi:10.1016/S0022-0248(98)01520-6

Characterization of MBE-grown II-VI semiconductor distributed Bragg reflectors

F. C. Peiris^*
, S. Lee
, U. Bindley
, J. K. Furdyna
, A. M. Stuckey
, M. R. Martin
, J. R. Buschert

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

We have grown distributed Bragg reflectors (DBRs) using two different combinations of II-VI semiconductor materials: ZnSe/Zn_0.84Mg_0.16S_0.07Se_0.93 and ZnSe/ZnTe. The nearly lattice matched ZnSeZnMgSSe system showed a reflectivity maximum near 470 nm, but only with the modest value of 70%. The strained ZnSe/ZnTe system, on the other hand, has over 90% reflectivity near 725 nm. Furthermore, the higher reflectivity in the ZnSe/ZnTe system is achieved with only 15 periods, compared to the 50 periods in the ZnSe/ZnMgSSe system. It is also found that the ZnSe/ZnTe system produces a stop band nearly 5 times wider than the ZnSe/ZnMgSSe system.

Original language	English
Pages (from-to)	1040-1043
Number of pages	4
Journal	Journal of Crystal Growth
Volume	201
DOIs	https://doi.org/10.1016/S0022-0248(98)01520-6
Publication status	Published - 1999 May
Externally published	Yes
Event	Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes Duration: 1998 Aug 31 → 1998 Sept 4

Bibliographical note

Funding Information:
We would like to thank M. Kim and C. Kim for their help in obtaining the PL results. This work was supported by the National Science Foundation Grant DMR97-05064.

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(98)01520-6

Cite this

@article{382375d4f74f4c88a2d384477e0af490,

title = "Characterization of MBE-grown II-VI semiconductor distributed Bragg reflectors",

abstract = "We have grown distributed Bragg reflectors (DBRs) using two different combinations of II-VI semiconductor materials: ZnSe/Zn0.84Mg0.16S0.07Se0.93 and ZnSe/ZnTe. The nearly lattice matched ZnSeZnMgSSe system showed a reflectivity maximum near 470 nm, but only with the modest value of 70\%. The strained ZnSe/ZnTe system, on the other hand, has over 90\% reflectivity near 725 nm. Furthermore, the higher reflectivity in the ZnSe/ZnTe system is achieved with only 15 periods, compared to the 50 periods in the ZnSe/ZnMgSSe system. It is also found that the ZnSe/ZnTe system produces a stop band nearly 5 times wider than the ZnSe/ZnMgSSe system.",

author = "Peiris, \{F. C.\} and S. Lee and U. Bindley and Furdyna, \{J. K.\} and Stuckey, \{A. M.\} and Martin, \{M. R.\} and Buschert, \{J. R.\}",

note = "Funding Information: We would like to thank M. Kim and C. Kim for their help in obtaining the PL results. This work was supported by the National Science Foundation Grant DMR97-05064.; Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) ; Conference date: 31-08-1998 Through 04-09-1998",

year = "1999",

month = may,

doi = "10.1016/S0022-0248(98)01520-6",

language = "English",

volume = "201",

pages = "1040--1043",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Characterization of MBE-grown II-VI semiconductor distributed Bragg reflectors

AU - Peiris, F. C.

AU - Lee, S.

AU - Bindley, U.

AU - Furdyna, J. K.

AU - Stuckey, A. M.

AU - Martin, M. R.

AU - Buschert, J. R.

N1 - Funding Information: We would like to thank M. Kim and C. Kim for their help in obtaining the PL results. This work was supported by the National Science Foundation Grant DMR97-05064.

PY - 1999/5

Y1 - 1999/5

N2 - We have grown distributed Bragg reflectors (DBRs) using two different combinations of II-VI semiconductor materials: ZnSe/Zn0.84Mg0.16S0.07Se0.93 and ZnSe/ZnTe. The nearly lattice matched ZnSeZnMgSSe system showed a reflectivity maximum near 470 nm, but only with the modest value of 70%. The strained ZnSe/ZnTe system, on the other hand, has over 90% reflectivity near 725 nm. Furthermore, the higher reflectivity in the ZnSe/ZnTe system is achieved with only 15 periods, compared to the 50 periods in the ZnSe/ZnMgSSe system. It is also found that the ZnSe/ZnTe system produces a stop band nearly 5 times wider than the ZnSe/ZnMgSSe system.

AB - We have grown distributed Bragg reflectors (DBRs) using two different combinations of II-VI semiconductor materials: ZnSe/Zn0.84Mg0.16S0.07Se0.93 and ZnSe/ZnTe. The nearly lattice matched ZnSeZnMgSSe system showed a reflectivity maximum near 470 nm, but only with the modest value of 70%. The strained ZnSe/ZnTe system, on the other hand, has over 90% reflectivity near 725 nm. Furthermore, the higher reflectivity in the ZnSe/ZnTe system is achieved with only 15 periods, compared to the 50 periods in the ZnSe/ZnMgSSe system. It is also found that the ZnSe/ZnTe system produces a stop band nearly 5 times wider than the ZnSe/ZnMgSSe system.

UR - https://www.scopus.com/pages/publications/0032667085

U2 - 10.1016/S0022-0248(98)01520-6

DO - 10.1016/S0022-0248(98)01520-6

M3 - Conference article

AN - SCOPUS:0032667085

SN - 0022-0248

VL - 201

SP - 1040

EP - 1043

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

T2 - Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X)

Y2 - 31 August 1998 through 4 September 1998

ER -

Characterization of MBE-grown II-VI semiconductor distributed Bragg reflectors

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

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