Characterization of mismatched SiGe grown on low temperature Si buffer layers by molecular beam epitaxy

K. K. Linder; F. C. Zhang; J. S. Rieh; P. Bhattacharya

doi:10.1016/S0022-0248(96)01004-4

Characterization of mismatched SiGe grown on low temperature Si buffer layers by molecular beam epitaxy

K. K. Linder, F. C. Zhang, J. S. Rieh, P. Bhattacharya

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Several types of buffer layer structures, including superlattice and step-graded layers, have been employed to reduce the threading dislocation in SiGe epitaxial layers. A new technique, using a 0.1 μm thick Si buffer grown at 450°C by molecular beam epitaxy, provides the best results. For a 0.5 μm thick Si_0.85Ge_0.15 layer, the dislocation density is ≤ 10⁵ cm^-2. Hall measurements indicate an improvement in the hole mobility of a 1 μm thick Boron doped Si_0.7Ge_0.3 layer. A SiGe/Si heterojunction bipolar transistor has been fabricated exploiting the low temperature Si buffer. Transmission electron microscopy of the structure does not indicate any evidence of threading dislocations.

Original language	English
Pages (from-to)	499-503
Number of pages	5
Journal	Journal of Crystal Growth
Volume	175-176
Issue number	PART 1
DOIs	https://doi.org/10.1016/S0022-0248(96)01004-4
Publication status	Published - 1997 May
Externally published	Yes

Keywords

DLTS
LT-Si buffer
TEM
Threading dislocation density

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(96)01004-4

Cite this

@article{7d348d6fa709463eac3a075240218f84,

title = "Characterization of mismatched SiGe grown on low temperature Si buffer layers by molecular beam epitaxy",

abstract = "Several types of buffer layer structures, including superlattice and step-graded layers, have been employed to reduce the threading dislocation in SiGe epitaxial layers. A new technique, using a 0.1 μm thick Si buffer grown at 450°C by molecular beam epitaxy, provides the best results. For a 0.5 μm thick Si0.85Ge0.15 layer, the dislocation density is ≤ 105 cm-2. Hall measurements indicate an improvement in the hole mobility of a 1 μm thick Boron doped Si0.7Ge0.3 layer. A SiGe/Si heterojunction bipolar transistor has been fabricated exploiting the low temperature Si buffer. Transmission electron microscopy of the structure does not indicate any evidence of threading dislocations.",

keywords = "DLTS, LT-Si buffer, TEM, Threading dislocation density",

author = "Linder, {K. K.} and Zhang, {F. C.} and Rieh, {J. S.} and P. Bhattacharya",

note = "Funding Information: The authors would like to thank Dr. J. Mansfield and Hal Estry for their assistance with TEM. The work is supported by the Air Force Office of Scientific Research under Grant F49620-95-1-0013 and by an AASERT Fellowship (AFOSR) under Grant F49620-94-0404.",

year = "1997",

month = may,

doi = "10.1016/S0022-0248(96)01004-4",

language = "English",

volume = "175-176",

pages = "499--503",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "PART 1",

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TY - JOUR

T1 - Characterization of mismatched SiGe grown on low temperature Si buffer layers by molecular beam epitaxy

AU - Linder, K. K.

AU - Zhang, F. C.

AU - Rieh, J. S.

AU - Bhattacharya, P.

N1 - Funding Information: The authors would like to thank Dr. J. Mansfield and Hal Estry for their assistance with TEM. The work is supported by the Air Force Office of Scientific Research under Grant F49620-95-1-0013 and by an AASERT Fellowship (AFOSR) under Grant F49620-94-0404.

PY - 1997/5

Y1 - 1997/5

N2 - Several types of buffer layer structures, including superlattice and step-graded layers, have been employed to reduce the threading dislocation in SiGe epitaxial layers. A new technique, using a 0.1 μm thick Si buffer grown at 450°C by molecular beam epitaxy, provides the best results. For a 0.5 μm thick Si0.85Ge0.15 layer, the dislocation density is ≤ 105 cm-2. Hall measurements indicate an improvement in the hole mobility of a 1 μm thick Boron doped Si0.7Ge0.3 layer. A SiGe/Si heterojunction bipolar transistor has been fabricated exploiting the low temperature Si buffer. Transmission electron microscopy of the structure does not indicate any evidence of threading dislocations.

AB - Several types of buffer layer structures, including superlattice and step-graded layers, have been employed to reduce the threading dislocation in SiGe epitaxial layers. A new technique, using a 0.1 μm thick Si buffer grown at 450°C by molecular beam epitaxy, provides the best results. For a 0.5 μm thick Si0.85Ge0.15 layer, the dislocation density is ≤ 105 cm-2. Hall measurements indicate an improvement in the hole mobility of a 1 μm thick Boron doped Si0.7Ge0.3 layer. A SiGe/Si heterojunction bipolar transistor has been fabricated exploiting the low temperature Si buffer. Transmission electron microscopy of the structure does not indicate any evidence of threading dislocations.

KW - DLTS

KW - LT-Si buffer

KW - TEM

KW - Threading dislocation density

UR - http://www.scopus.com/inward/record.url?scp=0031143962&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(96)01004-4

DO - 10.1016/S0022-0248(96)01004-4

M3 - Article

AN - SCOPUS:0031143962

SN - 0022-0248

VL - 175-176

SP - 499

EP - 503

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - PART 1

ER -

Characterization of mismatched SiGe grown on low temperature Si buffer layers by molecular beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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