Characterization of mocvd-prepared cis solar cells

Seung Hoon Lee; Gyu Hyun Lee; Hae Seok Lee; Donghwan Kim; Yoon Mook Kang

doi:10.3390/en14227721

Characterization of mocvd-prepared cis solar cells

Seung Hoon Lee, Gyu Hyun Lee, Hae Seok Lee, Donghwan Kim, Yoon Mook Kang

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Chalcopyrite Cu(In,Ga)Se₂ (CIGS) solar cells prepared via metal-organic chemical vapor deposition (MOCVD) are one of the candidates for highly advanced photovoltaic devices. This is because of their effectiveness and potential for reducing production costs through large-scale production. However, research on MOCVD-prepared solar cells is progressing slower than that on other types of solar cells, primarily because the preparation of CuInSe₂ (CIS)-based films via MOCVD is relatively more sophisticated. In this study, we analyzed CIS solar cells prepared via three-stage MOCVD and processed with relatively simple precursors and techniques. We achieved an energy-conversion efficiency of 7.39% without applying a buffer layer. Instead, we applied a Cu-deficient layer to create a buried pn junction. Ultimately, we demonstrated that the fabrication of fully-MOCVD-processed CIS photovoltaic devices is feasible.

Original language	English
Article number	7721
Journal	Energies
Volume	14
Issue number	22
DOIs	https://doi.org/10.3390/en14227721
Publication status	Published - 2021 Nov 1

Bibliographical note

Funding Information:
Author Contributions: Conceptualization, S.H.L.; methodology, S.H.L.; validation, S.H.L. and Y.K.; Auftohromr aClo anntarliybsuisti, oSn.Hs:.LC.o; inncveepsttuigaalitzioatni,oSn.,HS..LH.;. Lre.;smouertcheosd, oGl.oHg.yL,.S; .dHa.tLa. c; uvraalitdioanti,o Sn.H, S.L.H.;. wL.raitnindgY—.Ko.r;ig-forminaall danraaflty spirse,pSa.Hra.tLio.;ni,n Sv.Hes.tLig.;a wtiorinti,nSg.—H.rLe.v;ireewso aunrdcees,dGiti.nHg.,L S.;.Hda.Lta.; cvuisruaatiloizna,tiSo.Hn,.LS..H; w.Lr.i;tsinugp—ervi-sion, D.K.; project administration, H.-S.L.; funding acquisition, H.-S.L. All authors have read and sion, D.K.; project administration, H.-S.L.; funding acquisition, H.-S.L. All authors have read and Funding: This work was supported by the “Human Resources Program in Energy Technology” of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), and granted financial resources from the Ministry of Trade, Industry & Energy, Republic of Korea (No. 20204010600470). resources from the Ministry of Trade, Industry & Energy, Republic of Korea (No. 20204010600470). This work was also supported by the KU-KIST Graduate School Project.

Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.

Keywords

Buried junction
CIGS solar cell
EBIC
MOCVD
MOCVD-prepared CIGS

ASJC Scopus subject areas

Control and Optimization
Energy (miscellaneous)
Engineering (miscellaneous)
Energy Engineering and Power Technology
Electrical and Electronic Engineering
Fuel Technology
Renewable Energy, Sustainability and the Environment

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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Cite this

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title = "Characterization of mocvd-prepared cis solar cells",

abstract = "Chalcopyrite Cu(In,Ga)Se2 (CIGS) solar cells prepared via metal-organic chemical vapor deposition (MOCVD) are one of the candidates for highly advanced photovoltaic devices. This is because of their effectiveness and potential for reducing production costs through large-scale production. However, research on MOCVD-prepared solar cells is progressing slower than that on other types of solar cells, primarily because the preparation of CuInSe2 (CIS)-based films via MOCVD is relatively more sophisticated. In this study, we analyzed CIS solar cells prepared via three-stage MOCVD and processed with relatively simple precursors and techniques. We achieved an energy-conversion efficiency of 7.39% without applying a buffer layer. Instead, we applied a Cu-deficient layer to create a buried pn junction. Ultimately, we demonstrated that the fabrication of fully-MOCVD-processed CIS photovoltaic devices is feasible.",

keywords = "Buried junction, CIGS solar cell, EBIC, MOCVD, MOCVD-prepared CIGS",

author = "Lee, {Seung Hoon} and Lee, {Gyu Hyun} and Lee, {Hae Seok} and Donghwan Kim and Kang, {Yoon Mook}",

note = "Funding Information: Author Contributions: Conceptualization, S.H.L.; methodology, S.H.L.; validation, S.H.L. and Y.K.; Auftohromr aClo anntarliybsuisti, oSn.Hs:.LC.o; inncveepsttuigaalitzioatni,oSn.,HS..LH.;. Lre.;smouertcheosd, oGl.oHg.yL,.S; .dHa.tLa. c; uvraalitdioanti,o Sn.H, S.L.H.;. wL.raitnindgY—.Ko.r;ig-forminaall danraaflty spirse,pSa.Hra.tLio.;ni,n Sv.Hes.tLig.;a wtiorinti,nSg.—H.rLe.v;ireewso aunrdcees,dGiti.nHg.,L S.;.Hda.Lta.; cvuisruaatiloizna,tiSo.Hn,.LS..H; w.Lr.i;tsinugp—ervi-sion, D.K.; project administration, H.-S.L.; funding acquisition, H.-S.L. All authors have read and sion, D.K.; project administration, H.-S.L.; funding acquisition, H.-S.L. All authors have read and Funding: This work was supported by the “Human Resources Program in Energy Technology” of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), and granted financial resources from the Ministry of Trade, Industry & Energy, Republic of Korea (No. 20204010600470). resources from the Ministry of Trade, Industry & Energy, Republic of Korea (No. 20204010600470). This work was also supported by the KU-KIST Graduate School Project. Publisher Copyright: {\textcopyright} 2021 by the authors. Licensee MDPI, Basel, Switzerland.",

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doi = "10.3390/en14227721",

language = "English",

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PY - 2021/11/1

Y1 - 2021/11/1

N2 - Chalcopyrite Cu(In,Ga)Se2 (CIGS) solar cells prepared via metal-organic chemical vapor deposition (MOCVD) are one of the candidates for highly advanced photovoltaic devices. This is because of their effectiveness and potential for reducing production costs through large-scale production. However, research on MOCVD-prepared solar cells is progressing slower than that on other types of solar cells, primarily because the preparation of CuInSe2 (CIS)-based films via MOCVD is relatively more sophisticated. In this study, we analyzed CIS solar cells prepared via three-stage MOCVD and processed with relatively simple precursors and techniques. We achieved an energy-conversion efficiency of 7.39% without applying a buffer layer. Instead, we applied a Cu-deficient layer to create a buried pn junction. Ultimately, we demonstrated that the fabrication of fully-MOCVD-processed CIS photovoltaic devices is feasible.

AB - Chalcopyrite Cu(In,Ga)Se2 (CIGS) solar cells prepared via metal-organic chemical vapor deposition (MOCVD) are one of the candidates for highly advanced photovoltaic devices. This is because of their effectiveness and potential for reducing production costs through large-scale production. However, research on MOCVD-prepared solar cells is progressing slower than that on other types of solar cells, primarily because the preparation of CuInSe2 (CIS)-based films via MOCVD is relatively more sophisticated. In this study, we analyzed CIS solar cells prepared via three-stage MOCVD and processed with relatively simple precursors and techniques. We achieved an energy-conversion efficiency of 7.39% without applying a buffer layer. Instead, we applied a Cu-deficient layer to create a buried pn junction. Ultimately, we demonstrated that the fabrication of fully-MOCVD-processed CIS photovoltaic devices is feasible.

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KW - MOCVD-prepared CIGS

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DO - 10.3390/en14227721

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AN - SCOPUS:85119670124

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VL - 14

JO - Energies

JF - Energies

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M1 - 7721

ER -

Characterization of mocvd-prepared cis solar cells

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

UN SDGs

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