Characterization of optical and crystal qualities in InxGa1-xN/InyGa1-yN multi-quantum wells grown by MOCVD

Sung Nam Lee, Tan Sakong, Wonseok Lee, Hosun Paek, Moonsuk Seon, In Hwan Lee, Okhyun Nam, Yongjo Park

Research output: Contribution to journalConference articlepeer-review

18 Citations (Scopus)


We have investigated the optical and structural qualities of InxGa1-xN/InyGa1-yN multi-quantum wells (MQWs) on sapphire substrates using atomic force microscope (AFM), high resolution X-ray diffraction (HRXRD), and photoluminescence (PL). In0.08Ga0.92N/ In0.02Ga0.98N five MQWs were grown by metalorganic chemical vapor deposition with three different well growth rates. We found from HRXRD and AFM that the interface roughness of MQWs was improved and the density of threading dislocation with screw component was decreased from 1.2×109/cm2 to 2.5×107/cm2 with decreasing the growth rate. Moreover, PL measurements revealed that the MQWs grown with a lower growth rate represented higher PL intensity, narrower line width and less energy shift in power dependent PL. This implies that lower growth rate allows adatoms on the surface to have longer time to arrive at two-dimensional step ledges of growth front and thereby enhances crystal quality compared with higher growth rate, leading to enhanced optical and crystal quality of MQWs.

Original languageEnglish
Pages (from-to)256-261
Number of pages6
JournalJournal of Crystal Growth
Issue number1-2
Publication statusPublished - 2003 Mar
Externally publishedYes
EventACCGE-14 - Seatle, WA, United States
Duration: 2002 Aug 42002 Aug 9


  • A1. Atomic force microscopy
  • A3. Metalorganic chemical vapor deposition
  • Al. High resolution X-ray diffraction
  • B1. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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