Characterization of potential-induced degradation and recovery in cigs solar cells

Solhee Lee; Soohyun Bae; Se Jin Park; Jihye Gwak; Jaeho Yun; Yoonmook Kang; Donghwan Kim; Young Joo Eo; Hae Seok Lee

doi:10.3390/en14154628

Characterization of potential-induced degradation and recovery in cigs solar cells

Solhee Lee, Soohyun Bae, Se Jin Park, Jihye Gwak, Jaeho Yun, Yoonmook Kang, Donghwan Kim, Young Joo Eo, Hae Seok Lee

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The potential-induced degradation (PID) mechanism in Cu(In,Ga)(Se,S)₂ (CIGS) thin-film solar cells, which are alternative energy sources with a high efficiency (>23%) and upscaling possibilities, remains unclear. Therefore, the cause of PID in CIGS solar cells was investigated in this study at the cell level. First, an appropriate PID experiment structure at the cell level was determined. Subsequently, PID and recovery tests were conducted to confirm the PID phenomenon. Light current–voltage (I–V), dark I–V, and external quantum efficiency (EQE) analyses were conducted to determine changes in the cell characteristics. In addition, capacitance–voltage (C–V) measurements were carried out to determine the doping concentration and width of the space charge region (SCR). Based on the results, the causes of PID and recovery of CIGS solar cells were explored, and it was found that PID occurs due to changes in the bulk doping concentration and built-in potential at the junction. Furthermore, by distinguishing the effects of temperature and voltage, it was found that PID phenomena occurred when potential difference was involved.

Original language	English
Article number	4628
Journal	Energies
Volume	14
Issue number	15
DOIs	https://doi.org/10.3390/en14154628
Publication status	Published - 2021 Aug 1

Bibliographical note

Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.

Keywords

CIGS solar cells
Photovoltaics
Potential-induced degradation
Recovery
Solar cell

ASJC Scopus subject areas

Control and Optimization
Energy (miscellaneous)
Engineering (miscellaneous)
Energy Engineering and Power Technology
Electrical and Electronic Engineering
Fuel Technology
Renewable Energy, Sustainability and the Environment

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.3390/en14154628

Cite this

@article{6db4e1daea984b22ae4a032e8a713fa9,

title = "Characterization of potential-induced degradation and recovery in cigs solar cells",

abstract = "The potential-induced degradation (PID) mechanism in Cu(In,Ga)(Se,S)2 (CIGS) thin-film solar cells, which are alternative energy sources with a high efficiency (>23%) and upscaling possibilities, remains unclear. Therefore, the cause of PID in CIGS solar cells was investigated in this study at the cell level. First, an appropriate PID experiment structure at the cell level was determined. Subsequently, PID and recovery tests were conducted to confirm the PID phenomenon. Light current–voltage (I–V), dark I–V, and external quantum efficiency (EQE) analyses were conducted to determine changes in the cell characteristics. In addition, capacitance–voltage (C–V) measurements were carried out to determine the doping concentration and width of the space charge region (SCR). Based on the results, the causes of PID and recovery of CIGS solar cells were explored, and it was found that PID occurs due to changes in the bulk doping concentration and built-in potential at the junction. Furthermore, by distinguishing the effects of temperature and voltage, it was found that PID phenomena occurred when potential difference was involved.",

keywords = "CIGS solar cells, Photovoltaics, Potential-induced degradation, Recovery, Solar cell",

author = "Solhee Lee and Soohyun Bae and Park, {Se Jin} and Jihye Gwak and Jaeho Yun and Yoonmook Kang and Donghwan Kim and Eo, {Young Joo} and Lee, {Hae Seok}",

note = "Publisher Copyright: {\textcopyright} 2021 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2021",

month = aug,

day = "1",

doi = "10.3390/en14154628",

language = "English",

volume = "14",

journal = "Energies",

issn = "1996-1073",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "15",

}

TY - JOUR

T1 - Characterization of potential-induced degradation and recovery in cigs solar cells

AU - Lee, Solhee

AU - Bae, Soohyun

AU - Park, Se Jin

AU - Gwak, Jihye

AU - Yun, Jaeho

AU - Kang, Yoonmook

AU - Kim, Donghwan

AU - Eo, Young Joo

AU - Lee, Hae Seok

PY - 2021/8/1

Y1 - 2021/8/1

N2 - The potential-induced degradation (PID) mechanism in Cu(In,Ga)(Se,S)2 (CIGS) thin-film solar cells, which are alternative energy sources with a high efficiency (>23%) and upscaling possibilities, remains unclear. Therefore, the cause of PID in CIGS solar cells was investigated in this study at the cell level. First, an appropriate PID experiment structure at the cell level was determined. Subsequently, PID and recovery tests were conducted to confirm the PID phenomenon. Light current–voltage (I–V), dark I–V, and external quantum efficiency (EQE) analyses were conducted to determine changes in the cell characteristics. In addition, capacitance–voltage (C–V) measurements were carried out to determine the doping concentration and width of the space charge region (SCR). Based on the results, the causes of PID and recovery of CIGS solar cells were explored, and it was found that PID occurs due to changes in the bulk doping concentration and built-in potential at the junction. Furthermore, by distinguishing the effects of temperature and voltage, it was found that PID phenomena occurred when potential difference was involved.

AB - The potential-induced degradation (PID) mechanism in Cu(In,Ga)(Se,S)2 (CIGS) thin-film solar cells, which are alternative energy sources with a high efficiency (>23%) and upscaling possibilities, remains unclear. Therefore, the cause of PID in CIGS solar cells was investigated in this study at the cell level. First, an appropriate PID experiment structure at the cell level was determined. Subsequently, PID and recovery tests were conducted to confirm the PID phenomenon. Light current–voltage (I–V), dark I–V, and external quantum efficiency (EQE) analyses were conducted to determine changes in the cell characteristics. In addition, capacitance–voltage (C–V) measurements were carried out to determine the doping concentration and width of the space charge region (SCR). Based on the results, the causes of PID and recovery of CIGS solar cells were explored, and it was found that PID occurs due to changes in the bulk doping concentration and built-in potential at the junction. Furthermore, by distinguishing the effects of temperature and voltage, it was found that PID phenomena occurred when potential difference was involved.

KW - CIGS solar cells

KW - Photovoltaics

KW - Potential-induced degradation

KW - Recovery

KW - Solar cell

UR - http://www.scopus.com/inward/record.url?scp=85111626716&partnerID=8YFLogxK

U2 - 10.3390/en14154628

DO - 10.3390/en14154628

M3 - Article

AN - SCOPUS:85111626716

SN - 1996-1073

VL - 14

JO - Energies

JF - Energies

IS - 15

M1 - 4628

ER -

Characterization of potential-induced degradation and recovery in cigs solar cells

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this