Abstract
SiC nanowire was grown by APCVD using single precursors. Grown SiC nanowires had 10-60nm diameters and lengths of several micrometers. Nanowire's diameters and lengths were varied with kind of catalysts. Nanowire's growth scheme was divided by two regions with diameter of nanowire. At first region, nanowire was grown by VLS (vapor-liquid-solid) mechanism, but at the second region, nanowire growth was made by VS (vapor-solid) reaction. These differences were made from limitations of growth rate and deactivation effects. Growth temperature, time and flow rates of source gases were affected nanowire's diametesr and its lengths. And kind of catalysts, coating methods and precursors were affected growth direction and microstructures too.
| Original language | English |
|---|---|
| Article number | F7.16 |
| Pages (from-to) | 317-322 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium Proceedings |
| Volume | 832 |
| Publication status | Published - 2005 |
| Event | 2004 MRS Fall Meeting - Boston, MA, United States Duration: 2004 Nov 29 → 2004 Dec 2 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering