Characterization of SiNx:H thin film as a hydrogen passivation layer for silicon solar cells with passivated contacts

Jae Eun Kim; Se Jin Park; Ji Yeon Hyun; Hyomin Park; Soohyun Bae; Kwang sun Ji; Hyunho Kim; Kyung Dong Lee; Yoonmook Kang; Hae Seok Lee; Donghwan Kim

doi:10.1016/j.tsf.2019.02.016

Characterization of SiNx:H thin film as a hydrogen passivation layer for silicon solar cells with passivated contacts

Jae Eun Kim, Se Jin Park, Ji Yeon Hyun, Hyomin Park, Soohyun Bae, Kwang sun Ji, Hyunho Kim, Kyung Dong Lee, Yoonmook Kang, Hae Seok Lee, Donghwan Kim

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Silicon nitride (SiNx:H) films are generally used as passivation and anti-reflection layers in solar cells, and they are usually made by plasma-enhanced chemical vapor deposition (PECVD). Silicon nitride could act as a hydrogen diffusion source, and it also plays a role in chemical passivation. In this study, we investigated the improvement of the passivation characteristics of the passivated contact structure by a PECVD SiNx:H hydrogenation process and the characteristics of SiNx:H for improving the passivation characteristics. It was confirmed that the passivation characteristics cannot be predicted only by the mass density of the SiNx:H film, and the chemical bonding ratio in the SiNx:H thin film is also important. In addition, higher passivation characteristics can be obtained when SiNx:H thin films with higher S–H bond concentration and dominant N ₂ Si–H ₂ bonds are used.

Original language	English
Pages (from-to)	109-114
Number of pages	6
Journal	Thin Solid Films
Volume	675
DOIs	https://doi.org/10.1016/j.tsf.2019.02.016
Publication status	Published - 2019 Apr 1

Bibliographical note

Funding Information:
This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industy & Energy (MOTIE) of the Republic of Korea (No. 20163010012430 and 20163030014020 ). This work was also supported by the "Human Resources Program in Energy Technology" of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), with financial support from the Ministy of Trade, Industry and Energy , Republic of Korea (No. 20154030200760 ).

Publisher Copyright:
© 2019 Elsevier B.V.

Keywords

Passivated contact
Passivation
Silicon nitride
Solar cells

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2019.02.016

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title = "Characterization of SiNx:H thin film as a hydrogen passivation layer for silicon solar cells with passivated contacts",

abstract = " Silicon nitride (SiNx:H) films are generally used as passivation and anti-reflection layers in solar cells, and they are usually made by plasma-enhanced chemical vapor deposition (PECVD). Silicon nitride could act as a hydrogen diffusion source, and it also plays a role in chemical passivation. In this study, we investigated the improvement of the passivation characteristics of the passivated contact structure by a PECVD SiNx:H hydrogenation process and the characteristics of SiNx:H for improving the passivation characteristics. It was confirmed that the passivation characteristics cannot be predicted only by the mass density of the SiNx:H film, and the chemical bonding ratio in the SiNx:H thin film is also important. In addition, higher passivation characteristics can be obtained when SiNx:H thin films with higher S–H bond concentration and dominant N 2 Si–H 2 bonds are used.",

keywords = "Passivated contact, Passivation, Silicon nitride, Solar cells",

author = "Kim, {Jae Eun} and Park, {Se Jin} and Hyun, {Ji Yeon} and Hyomin Park and Soohyun Bae and Ji, {Kwang sun} and Hyunho Kim and Lee, {Kyung Dong} and Yoonmook Kang and Lee, {Hae Seok} and Donghwan Kim",

note = "Funding Information: This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industy & Energy (MOTIE) of the Republic of Korea (No. 20163010012430 and 20163030014020 ). This work was also supported by the {"}Human Resources Program in Energy Technology{"} of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), with financial support from the Ministy of Trade, Industry and Energy , Republic of Korea (No. 20154030200760 ). Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

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doi = "10.1016/j.tsf.2019.02.016",

language = "English",

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T1 - Characterization of SiNx:H thin film as a hydrogen passivation layer for silicon solar cells with passivated contacts

AU - Kim, Jae Eun

AU - Park, Se Jin

AU - Hyun, Ji Yeon

AU - Park, Hyomin

AU - Bae, Soohyun

AU - Ji, Kwang sun

AU - Kim, Hyunho

AU - Lee, Kyung Dong

AU - Kang, Yoonmook

AU - Lee, Hae Seok

AU - Kim, Donghwan

N1 - Funding Information: This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industy & Energy (MOTIE) of the Republic of Korea (No. 20163010012430 and 20163030014020 ). This work was also supported by the "Human Resources Program in Energy Technology" of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), with financial support from the Ministy of Trade, Industry and Energy , Republic of Korea (No. 20154030200760 ). Publisher Copyright: © 2019 Elsevier B.V.

PY - 2019/4/1

Y1 - 2019/4/1

N2 - Silicon nitride (SiNx:H) films are generally used as passivation and anti-reflection layers in solar cells, and they are usually made by plasma-enhanced chemical vapor deposition (PECVD). Silicon nitride could act as a hydrogen diffusion source, and it also plays a role in chemical passivation. In this study, we investigated the improvement of the passivation characteristics of the passivated contact structure by a PECVD SiNx:H hydrogenation process and the characteristics of SiNx:H for improving the passivation characteristics. It was confirmed that the passivation characteristics cannot be predicted only by the mass density of the SiNx:H film, and the chemical bonding ratio in the SiNx:H thin film is also important. In addition, higher passivation characteristics can be obtained when SiNx:H thin films with higher S–H bond concentration and dominant N 2 Si–H 2 bonds are used.

AB - Silicon nitride (SiNx:H) films are generally used as passivation and anti-reflection layers in solar cells, and they are usually made by plasma-enhanced chemical vapor deposition (PECVD). Silicon nitride could act as a hydrogen diffusion source, and it also plays a role in chemical passivation. In this study, we investigated the improvement of the passivation characteristics of the passivated contact structure by a PECVD SiNx:H hydrogenation process and the characteristics of SiNx:H for improving the passivation characteristics. It was confirmed that the passivation characteristics cannot be predicted only by the mass density of the SiNx:H film, and the chemical bonding ratio in the SiNx:H thin film is also important. In addition, higher passivation characteristics can be obtained when SiNx:H thin films with higher S–H bond concentration and dominant N 2 Si–H 2 bonds are used.

KW - Passivated contact

KW - Passivation

KW - Silicon nitride

KW - Solar cells

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Characterization of SiNx:H thin film as a hydrogen passivation layer for silicon solar cells with passivated contacts

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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