Characterization of sub-30 nm p+/n junction formed by plasma ion implantation

S. K. Baek; C. J. Choi; T. Y. Seong; H. Hwang; H. K. Kim; D. W. Moon

doi:10.1149/1.1393861

Characterization of sub-30 nm p⁺/n junction formed by plasma ion implantation

S. K. Baek, C. J. Choi, T. Y. Seong, H. Hwang, H. K. Kim, D. W. Moon

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We have investigated the electrical characteristics and junction depth and defect of ultrashallow junctions formed using plasma doping. Compared with ultralow energy boron ion implantation at 500 eV, the plasma doping process exhibits both a shallow junction depth and a low sheet resistance. The junction depths of the plasma-doped samples were 15 and 33 nm after annealing for 10 s at 900 and 950 °C, respectively. For the same junction depth, the sheet resistance of the B₂H₆ plasma-doped sample is an order of magnitude less than that of the 500 eV B ion implanted sample. Based on cross-sectional transmission electron microscope, deep level transient spectroscopy, and junction leakage current, the defects formed by the B₂H₆ plasma doping process can be completely removed by annealing at 950 °C for 10 s.

Original language	English
Pages (from-to)	3091-3093
Number of pages	3
Journal	Journal of the Electrochemical Society
Volume	147
Issue number	8
DOIs	https://doi.org/10.1149/1.1393861
Publication status	Published - 2000 Aug
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.1393861

Cite this

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abstract = "We have investigated the electrical characteristics and junction depth and defect of ultrashallow junctions formed using plasma doping. Compared with ultralow energy boron ion implantation at 500 eV, the plasma doping process exhibits both a shallow junction depth and a low sheet resistance. The junction depths of the plasma-doped samples were 15 and 33 nm after annealing for 10 s at 900 and 950 °C, respectively. For the same junction depth, the sheet resistance of the B2H6 plasma-doped sample is an order of magnitude less than that of the 500 eV B ion implanted sample. Based on cross-sectional transmission electron microscope, deep level transient spectroscopy, and junction leakage current, the defects formed by the B2H6 plasma doping process can be completely removed by annealing at 950 °C for 10 s.",

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T1 - Characterization of sub-30 nm p+/n junction formed by plasma ion implantation

AU - Baek, S. K.

AU - Choi, C. J.

AU - Seong, T. Y.

AU - Hwang, H.

AU - Kim, H. K.

AU - Moon, D. W.

PY - 2000/8

Y1 - 2000/8

N2 - We have investigated the electrical characteristics and junction depth and defect of ultrashallow junctions formed using plasma doping. Compared with ultralow energy boron ion implantation at 500 eV, the plasma doping process exhibits both a shallow junction depth and a low sheet resistance. The junction depths of the plasma-doped samples were 15 and 33 nm after annealing for 10 s at 900 and 950 °C, respectively. For the same junction depth, the sheet resistance of the B2H6 plasma-doped sample is an order of magnitude less than that of the 500 eV B ion implanted sample. Based on cross-sectional transmission electron microscope, deep level transient spectroscopy, and junction leakage current, the defects formed by the B2H6 plasma doping process can be completely removed by annealing at 950 °C for 10 s.

AB - We have investigated the electrical characteristics and junction depth and defect of ultrashallow junctions formed using plasma doping. Compared with ultralow energy boron ion implantation at 500 eV, the plasma doping process exhibits both a shallow junction depth and a low sheet resistance. The junction depths of the plasma-doped samples were 15 and 33 nm after annealing for 10 s at 900 and 950 °C, respectively. For the same junction depth, the sheet resistance of the B2H6 plasma-doped sample is an order of magnitude less than that of the 500 eV B ion implanted sample. Based on cross-sectional transmission electron microscope, deep level transient spectroscopy, and junction leakage current, the defects formed by the B2H6 plasma doping process can be completely removed by annealing at 950 °C for 10 s.

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