Characterization of ZnO film grown on polycarbonate by atomic layer deposition at low temperature

Gyeong Beom Lee, Gwon Deok Han, Joon Hyung Shim, Byoung Ho Choi

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


ZnO is an attractive material for use in various technological products such as phosphors, gas sensors, and transparent conductors. Recently, aluminum-doped zinc oxide has received attention as a potential replacement for indium tin oxide, which is one of the transparent conductive oxides used in flat panel displays, organic light-emitting diodes, and organic solar cells. In this study, the characteristics of ZnO films deposited on polycarbonate (PC) substrates by atomic layer deposition (ALD) are investigated for various process temperatures. The growth mechanism of these films was investigated at low process temperatures using x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). XRD and XPS were used to determine the preferred orientation and chemical composition of the films, respectively. Furthermore, the difference of the deposition mechanisms on an amorphous organic material, i.e., PC substrate and an inorganic material such as silicon was discussed from the viewpoint of the diffusion and deposition of precursors. The structure of the films was also investigated by chemical analysis in order to determine the effect of growth temperature on the films deposited by ALD.

Original languageEnglish
Article number01A134
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number1
Publication statusPublished - 2015 Jan 1

Bibliographical note

Publisher Copyright:
© 2014 American Vacuum Society.

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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