Charge pumping in Sc2O3/GaN gated MOS diodes

J. Kim; R. Mehandru; B. Luo; F. Ren; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton; Y. Irokawa

doi:10.1049/el:20020639

Charge pumping in Sc₂O₃/GaN gated MOS diodes

J. Kim, R. Mehandru, B. Luo, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, Y. Irokawa

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The charge pumping in Sc₂O₃/GaN gated metal oxide semiconductor (MOS) diodes was investigated. The Sc₂O₃/p-GaN gate-controlled n⁺p diodes were fabricated and the total surface state density was measured. Results showed that the surface charge density was 3×10¹² cm^-2 at 25 °C.

Original language	English
Pages (from-to)	920-921
Number of pages	2
Journal	Electronics Letters
Volume	38
Issue number	16
DOIs	https://doi.org/10.1049/el:20020639
Publication status	Published - 2002 Aug 1
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20020639

Cite this

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title = "Charge pumping in Sc2O3/GaN gated MOS diodes",

abstract = "The charge pumping in Sc2O3/GaN gated metal oxide semiconductor (MOS) diodes was investigated. The Sc2O3/p-GaN gate-controlled n+p diodes were fabricated and the total surface state density was measured. Results showed that the surface charge density was 3×1012 cm-2 at 25 °C.",

author = "J. Kim and R. Mehandru and B. Luo and F. Ren and Gila, {B. P.} and Onstine, {A. H.} and Abernathy, {C. R.} and Pearton, {S. J.} and Y. Irokawa",

year = "2002",

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doi = "10.1049/el:20020639",

language = "English",

volume = "38",

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journal = "Electronics Letters",

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T1 - Charge pumping in Sc2O3/GaN gated MOS diodes

AU - Kim, J.

AU - Mehandru, R.

AU - Luo, B.

AU - Ren, F.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Irokawa, Y.

PY - 2002/8/1

Y1 - 2002/8/1

N2 - The charge pumping in Sc2O3/GaN gated metal oxide semiconductor (MOS) diodes was investigated. The Sc2O3/p-GaN gate-controlled n+p diodes were fabricated and the total surface state density was measured. Results showed that the surface charge density was 3×1012 cm-2 at 25 °C.

AB - The charge pumping in Sc2O3/GaN gated metal oxide semiconductor (MOS) diodes was investigated. The Sc2O3/p-GaN gate-controlled n+p diodes were fabricated and the total surface state density was measured. Results showed that the surface charge density was 3×1012 cm-2 at 25 °C.

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U2 - 10.1049/el:20020639

DO - 10.1049/el:20020639

M3 - Article

AN - SCOPUS:0036683817

SN - 0013-5194

VL - 38

SP - 920

EP - 921

JO - Electronics Letters

JF - Electronics Letters

IS - 16

ER -

Charge pumping in Sc₂O₃/GaN gated MOS diodes

Abstract

ASJC Scopus subject areas

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