Charge-Recycling-Based Redundant Write Prevention Technique for Low-Power SOT-MRAM

Keyphrases

• Low Power 100%
• Magnetic Random Access Memory 100%
• Prevention Methods 100%
• Spin-orbit Torque 100%
• Charge Recycling 100%
• Write Energy 100%
• Energy Saving 60%
• Stored Data 40%
• Read Operation 40%
• Transistor 20%
• Negative Voltage 20%
• Perpendicular Magnetic Tunnel Junctions 20%
• 65nm CMOS 20%
• Suppression Mechanism 20%
• Pre-charge 20%
• Write Operation 20%
• Circuit Simulation 20%
• Voltage Swing 20%
• L3 Cache 20%
• Writing Time 20%
• Read Energy 20%
• Write Voltage 20%
• Gem5 20%
• Source Degeneration 20%
• Overvoltage Suppression 20%
• Low Power Techniques 20%
• X86 Processor 20%

Computer Science

• Random Access Memory 100%
• Read Operation 66%
• Write Operation 33%
• Circuit Simulation 33%