Charge transport modulation of silicon nanowire by O2 plasma

Jamin Koo; Sangsig Kim

doi:10.1016/j.solidstatesciences.2009.08.004

Charge transport modulation of silicon nanowire by O₂ plasma

Jamin Koo, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The modification of the electrical characteristics of field-effect transistors (FETs) with channels composed of n- or p-type silicon nanowires (SiNWs) by oxygen plasma treatment is investigated in this study. The SiNWs obtained from silicon bulk wafers are <111> surface-oriented and their doping concentrations are ∼10²¹ and ∼10¹⁷ cm^-3 for the n- and p-type SiNWs, respectively. After the back-gate SiNWFETs were subjected to oxygen plasma treatment, the magnitude of the drain current of the n-type SiNWs was decreased, whereas that of the p-type SiNWs was increased, while the gate-dependent characteristics of both of types of SiNWs were improved. The changes in the electrical characteristics are due to the adsorption of oxygen ions on the surface of the SiNWs. To verify the effect of the oxygen ions, the SiNWFETs were kept in a vacuum for 24 h whereupon their electrical characteristics tended to revert to their inherent state.

Original language	English
Pages (from-to)	1870-1874
Number of pages	5
Journal	Solid State Sciences
Volume	11
Issue number	11
DOIs	https://doi.org/10.1016/j.solidstatesciences.2009.08.004
Publication status	Published - 2009 Nov

Keywords

Electronic transport
Nanowire
Semiconductors
Silicon

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1016/j.solidstatesciences.2009.08.004

Cite this

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title = "Charge transport modulation of silicon nanowire by O2 plasma",

abstract = "The modification of the electrical characteristics of field-effect transistors (FETs) with channels composed of n- or p-type silicon nanowires (SiNWs) by oxygen plasma treatment is investigated in this study. The SiNWs obtained from silicon bulk wafers are <111> surface-oriented and their doping concentrations are ∼1021 and ∼1017 cm-3 for the n- and p-type SiNWs, respectively. After the back-gate SiNWFETs were subjected to oxygen plasma treatment, the magnitude of the drain current of the n-type SiNWs was decreased, whereas that of the p-type SiNWs was increased, while the gate-dependent characteristics of both of types of SiNWs were improved. The changes in the electrical characteristics are due to the adsorption of oxygen ions on the surface of the SiNWs. To verify the effect of the oxygen ions, the SiNWFETs were kept in a vacuum for 24 h whereupon their electrical characteristics tended to revert to their inherent state.",

keywords = "Electronic transport, Nanowire, Semiconductors, Silicon",

author = "Jamin Koo and Sangsig Kim",

note = "Funding Information: This work was supported by the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), the Medium-term Strategic Technology Development Program, the “SystemIC2010” project of the Korea Ministry of Commerce, Industry and Energy, the National Research Lab. Program (R0A-2005-000-10045-0 (2008)), the Nano R&D Program (M10703000980-08M0300-98010), and World Class University (WCU, R32-2008-000-10082-0) Project of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation).",

year = "2009",

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doi = "10.1016/j.solidstatesciences.2009.08.004",

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volume = "11",

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AU - Koo, Jamin

AU - Kim, Sangsig

N1 - Funding Information: This work was supported by the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), the Medium-term Strategic Technology Development Program, the “SystemIC2010” project of the Korea Ministry of Commerce, Industry and Energy, the National Research Lab. Program (R0A-2005-000-10045-0 (2008)), the Nano R&D Program (M10703000980-08M0300-98010), and World Class University (WCU, R32-2008-000-10082-0) Project of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation).

PY - 2009/11

Y1 - 2009/11

N2 - The modification of the electrical characteristics of field-effect transistors (FETs) with channels composed of n- or p-type silicon nanowires (SiNWs) by oxygen plasma treatment is investigated in this study. The SiNWs obtained from silicon bulk wafers are <111> surface-oriented and their doping concentrations are ∼1021 and ∼1017 cm-3 for the n- and p-type SiNWs, respectively. After the back-gate SiNWFETs were subjected to oxygen plasma treatment, the magnitude of the drain current of the n-type SiNWs was decreased, whereas that of the p-type SiNWs was increased, while the gate-dependent characteristics of both of types of SiNWs were improved. The changes in the electrical characteristics are due to the adsorption of oxygen ions on the surface of the SiNWs. To verify the effect of the oxygen ions, the SiNWFETs were kept in a vacuum for 24 h whereupon their electrical characteristics tended to revert to their inherent state.

AB - The modification of the electrical characteristics of field-effect transistors (FETs) with channels composed of n- or p-type silicon nanowires (SiNWs) by oxygen plasma treatment is investigated in this study. The SiNWs obtained from silicon bulk wafers are <111> surface-oriented and their doping concentrations are ∼1021 and ∼1017 cm-3 for the n- and p-type SiNWs, respectively. After the back-gate SiNWFETs were subjected to oxygen plasma treatment, the magnitude of the drain current of the n-type SiNWs was decreased, whereas that of the p-type SiNWs was increased, while the gate-dependent characteristics of both of types of SiNWs were improved. The changes in the electrical characteristics are due to the adsorption of oxygen ions on the surface of the SiNWs. To verify the effect of the oxygen ions, the SiNWFETs were kept in a vacuum for 24 h whereupon their electrical characteristics tended to revert to their inherent state.

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