Charge trap flash memory using ferroelectric materials as a blocking layer

Yujeong Seo; Ho Myoung An; Min Yeong Song; Tae Geun Kim

doi:10.1063/1.4705411

Charge trap flash memory using ferroelectric materials as a blocking layer

Yujeong Seo, Ho Myoung An, Min Yeong Song, Tae Geun Kim

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

In this paper, we propose a charge-trap flash memory device using a ferroelectric material, Sr _0.7Bi _2.3Nb ₂O ₉ (SBN), with spontaneous polarization as a blocking layer. This device consists of metal/SBN/nitride/oxide/silicon and has an advantage in the carrier injection into the nitride from the silicon due to polarization charges formed in the ferroelectric material. Compared to conventional metal/oxide/nitride/oxide/silicon memory devices, the proposed devices showed a larger memory window (7 V), faster program/erase (P/E) speeds (100/500 μs), and higher endurance (10 ⁵P/E cycles) with comparable retention properties.

Original language	English
Article number	173507
Journal	Applied Physics Letters
Volume	100
Issue number	17
DOIs	https://doi.org/10.1063/1.4705411
Publication status	Published - 2012 Apr 23

Bibliographical note

Funding Information:
This work was supported by the Seoul R&BD program (ST100024) and Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Education, Science, and Technology (MEST) (No.2011-00125).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4705411

Cite this

@article{b38802af5ac644ad8721145c6512103e,

title = "Charge trap flash memory using ferroelectric materials as a blocking layer",

abstract = "In this paper, we propose a charge-trap flash memory device using a ferroelectric material, Sr 0.7Bi 2.3Nb 2O 9 (SBN), with spontaneous polarization as a blocking layer. This device consists of metal/SBN/nitride/oxide/silicon and has an advantage in the carrier injection into the nitride from the silicon due to polarization charges formed in the ferroelectric material. Compared to conventional metal/oxide/nitride/oxide/silicon memory devices, the proposed devices showed a larger memory window (7 V), faster program/erase (P/E) speeds (100/500 μs), and higher endurance (10 5P/E cycles) with comparable retention properties.",

author = "Yujeong Seo and An, {Ho Myoung} and {Yeong Song}, Min and {Geun Kim}, Tae",

note = "Funding Information: This work was supported by the Seoul R&BD program (ST100024) and Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Education, Science, and Technology (MEST) (No.2011-00125).",

year = "2012",

month = apr,

day = "23",

doi = "10.1063/1.4705411",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "17",

}

TY - JOUR

T1 - Charge trap flash memory using ferroelectric materials as a blocking layer

AU - Seo, Yujeong

AU - An, Ho Myoung

AU - Yeong Song, Min

AU - Geun Kim, Tae

N1 - Funding Information: This work was supported by the Seoul R&BD program (ST100024) and Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Education, Science, and Technology (MEST) (No.2011-00125).

PY - 2012/4/23

Y1 - 2012/4/23

N2 - In this paper, we propose a charge-trap flash memory device using a ferroelectric material, Sr 0.7Bi 2.3Nb 2O 9 (SBN), with spontaneous polarization as a blocking layer. This device consists of metal/SBN/nitride/oxide/silicon and has an advantage in the carrier injection into the nitride from the silicon due to polarization charges formed in the ferroelectric material. Compared to conventional metal/oxide/nitride/oxide/silicon memory devices, the proposed devices showed a larger memory window (7 V), faster program/erase (P/E) speeds (100/500 μs), and higher endurance (10 5P/E cycles) with comparable retention properties.

AB - In this paper, we propose a charge-trap flash memory device using a ferroelectric material, Sr 0.7Bi 2.3Nb 2O 9 (SBN), with spontaneous polarization as a blocking layer. This device consists of metal/SBN/nitride/oxide/silicon and has an advantage in the carrier injection into the nitride from the silicon due to polarization charges formed in the ferroelectric material. Compared to conventional metal/oxide/nitride/oxide/silicon memory devices, the proposed devices showed a larger memory window (7 V), faster program/erase (P/E) speeds (100/500 μs), and higher endurance (10 5P/E cycles) with comparable retention properties.

UR - http://www.scopus.com/inward/record.url?scp=84860323203&partnerID=8YFLogxK

U2 - 10.1063/1.4705411

DO - 10.1063/1.4705411

M3 - Article

AN - SCOPUS:84860323203

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 173507

ER -

Charge trap flash memory using ferroelectric materials as a blocking layer

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this