Charge trap flash memory using ferroelectric materials as a blocking layer

Yujeong Seo, Ho Myoung An, Min Yeong Song, Tae Geun Kim

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


In this paper, we propose a charge-trap flash memory device using a ferroelectric material, Sr 0.7Bi 2.3Nb 2O 9 (SBN), with spontaneous polarization as a blocking layer. This device consists of metal/SBN/nitride/oxide/silicon and has an advantage in the carrier injection into the nitride from the silicon due to polarization charges formed in the ferroelectric material. Compared to conventional metal/oxide/nitride/oxide/silicon memory devices, the proposed devices showed a larger memory window (7 V), faster program/erase (P/E) speeds (100/500 μs), and higher endurance (10 5P/E cycles) with comparable retention properties.

Original languageEnglish
Article number173507
JournalApplied Physics Letters
Issue number17
Publication statusPublished - 2012 Apr 23

Bibliographical note

Funding Information:
This work was supported by the Seoul R&BD program (ST100024) and Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Education, Science, and Technology (MEST) (No.2011-00125).

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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