Abstract
GaAsN thin films were grown by chemical beam epitaxy (CBE) with monomethylhydrazine (MMHy) as a N source. Processes that determine the N composition in the GaAsN thin films were investigated in the growth temperature range from 340 to 480°C. When growth temperature is low (340-390°C), N composition is mainly determined by the supply of N species generated from MMHy and growth rate, since the desorption rate of N species from the growing surface is low. The effect of the desorption of N species on N composition is enhanced by increasing growth temperature (390-445°C). When growth temperature is high (445-480°C), the degree of N atom segregation from the grown layer increases, resulting in a marked decrease in N composition. Thus, N composition is determined by the balance of supply and desorption of N species, and growth rate.
Original language | English |
---|---|
Pages (from-to) | 2844-2847 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 46 |
Issue number | 5 A |
DOIs | |
Publication status | Published - 2007 May 8 |
Externally published | Yes |
Keywords
- Chemical beam epitaxy
- GaAs
- GaAsN
- Monomethylhydrazine
- N composition
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy