Chemical beam epitaxy of InGaAsN films for multi-junction tandem solar cells

Hae Seok Lee, K. Nishimura, Y. Yagi, M. Tachibana, N. J. Ekins-Daukes, Y. Ohshita, N. Kojima, M. Yamaguchi

Research output: Contribution to journalConference articlepeer-review

45 Citations (Scopus)


Chemical beam epitaxy (CBE) offers a new growth technique for InGaAsN films that are expected to provide the third cell in an ultra-efficiency 4-junction tandem III-V solar cell. In the CBE system, the selection of arsenic (As) and nitrogen (N) sources is important, so the decomposition processes of As (TBAs, TDMAAs) and N (DMHy, MMHy) precursors were investigated with substrate temperature. Both tertiarybutylarsine (TBAs) and trisdimethylaminoarsenic (TDMAAs) were decomposed at a low temperature (<300 °C). While methyl alkyl and tertiarybutyl radical were produced by decomposition of TBAs, Dimethylamine and Aziridine were produced during the decomposition of TDMAAs. The residual carbon concentration in GaAs films grown with TDMAAs was less than 1016 cm-3. The incorporation of N in GaAsN films grown with DMHy and MMHy decreased with increasing substrate temperature, and the incorporation of N in GaAsN films grown with MMHy was higher.

Original languageEnglish
Pages (from-to)e1127-e1130
JournalJournal of Crystal Growth
Issue number1-2
Publication statusPublished - 2005 Feb 15
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported in part by the Ministry of Education Culture, Sports, Science and Technology as a Private University Academic Frontier Center Program, and by the New Energy and Industrial Technology Development Organization as a part of the New Sunshine Program in Japan.


  • A1. X-ray diffraction
  • A3. Chemical beam epitaxy
  • B1. Nitrides
  • B3. Solar cells

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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