Abstract
Chemical beam epitaxy (CBE) offers a new growth technique for InGaAsN films that are expected to provide the third cell in an ultra-efficiency 4-junction tandem III-V solar cell. In the CBE system, the selection of arsenic (As) and nitrogen (N) sources is important, so the decomposition processes of As (TBAs, TDMAAs) and N (DMHy, MMHy) precursors were investigated with substrate temperature. Both tertiarybutylarsine (TBAs) and trisdimethylaminoarsenic (TDMAAs) were decomposed at a low temperature (<300 °C). While methyl alkyl and tertiarybutyl radical were produced by decomposition of TBAs, Dimethylamine and Aziridine were produced during the decomposition of TDMAAs. The residual carbon concentration in GaAs films grown with TDMAAs was less than 1016 cm-3. The incorporation of N in GaAsN films grown with DMHy and MMHy decreased with increasing substrate temperature, and the incorporation of N in GaAsN films grown with MMHy was higher.
| Original language | English |
|---|---|
| Pages (from-to) | e1127-e1130 |
| Journal | Journal of Crystal Growth |
| Volume | 275 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 2005 Feb 15 |
| Externally published | Yes |
Bibliographical note
Funding Information:This work was supported in part by the Ministry of Education Culture, Sports, Science and Technology as a Private University Academic Frontier Center Program, and by the New Energy and Industrial Technology Development Organization as a part of the New Sunshine Program in Japan.
Keywords
- A1. X-ray diffraction
- A3. Chemical beam epitaxy
- B1. Nitrides
- B3. Solar cells
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry