Abstract
Black phosphorus (BP) is a recently rediscovered layered material with outstanding optical and electrical properties. Its large adsorption energy and high surface-to-volume ratio have motivated chemical sensing and doping applications. We analyzed the charge transport properties as BP-based field-effect transistors (FETs) were chemically doped by adsorption of gas molecules. The electron-withdrawing NO2 and the electron-donating NH3 molecules were applied to observe p-doping and n-doping behaviors, respectively, in BP channel layer. Y-function method was used to extract the device parameters, allowing us to elucidate the chemical doping effects of different types of gas molecules in BP FETs. Excellent sensing ability of BP-based devices to gas molecules was also demonstrated. Our results provide a facile method to control the device properties of BP-based FET via the chemical doping.
| Original language | English |
|---|---|
| Pages (from-to) | Q3065-Q3069 |
| Journal | ECS Journal of Solid State Science and Technology |
| Volume | 7 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2018 |
Bibliographical note
Funding Information:This work was supported by the New & Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) granted financial from the Ministry of Trade, Industry & Energy, Republic of Korea (No. 20173010012970) and the Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) funded by the Ministry of Science and ICT (NRF-2017M1A2A2087351).
Publisher Copyright:
© The Author(s) 2018. Published by ECS.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials