Abstract
Chemical lift-off of (1122) semipolar GaN using triangular cavities was investigated. The (1122) semipolar GaN was grown using epitaxial lateral overgrowth by metal-organic chemical vapor deposition on m-plane sapphire, in such a way as to keep N terminated surface of c-plane GaN exposed in the cavities. After regrowing 300 μm thick (1122) semipolar GaN by hydride vapor phase epitaxy for a free-standing (1122) semipolar GaN substrate, the triangular cavities of the templates were chemically etched in molten KOH. The (000-2) plane in the triangular cavities can be etched in the [0002] direction with the high lateral etching rate of 196 μm/min. The resulting free-standing (1122) semipolar GaN substrate was confirmed to be strain-free by the Raman analysis.
Original language | English |
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Pages (from-to) | 134-138 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 338 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2012 Jan 1 |
Externally published | Yes |
Keywords
- A1. Chemical etching
- A3. Metalorganic chemical vapor deposition
- B1. Semipolar GaN
- B2. GaN substrate
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry