Chemical lift-off of (1122) semipolar GaN using periodic triangular cavities

Dae Woo Jeon; Seung Jae Lee; Tak Jeong; Jong Hyeob Baek; Jae Woo Park; Lee Woon Jang; Myoung Kim; In Hwan Lee; Jin Woo Ju

doi:10.1016/j.jcrysgro.2011.11.014

Chemical lift-off of (1122) semipolar GaN using periodic triangular cavities

Dae Woo Jeon, Seung Jae Lee, Tak Jeong, Jong Hyeob Baek, Jae Woo Park, Lee Woon Jang, Myoung Kim, In Hwan Lee, Jin Woo Ju

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Chemical lift-off of (1122) semipolar GaN using triangular cavities was investigated. The (1122) semipolar GaN was grown using epitaxial lateral overgrowth by metal-organic chemical vapor deposition on m-plane sapphire, in such a way as to keep N terminated surface of c-plane GaN exposed in the cavities. After regrowing 300 μm thick (1122) semipolar GaN by hydride vapor phase epitaxy for a free-standing (1122) semipolar GaN substrate, the triangular cavities of the templates were chemically etched in molten KOH. The (000-2) plane in the triangular cavities can be etched in the [0002] direction with the high lateral etching rate of 196 μm/min. The resulting free-standing (1122) semipolar GaN substrate was confirmed to be strain-free by the Raman analysis.

Original language	English
Pages (from-to)	134-138
Number of pages	5
Journal	Journal of Crystal Growth
Volume	338
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.11.014
Publication status	Published - 2012 Jan 1
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by the IT R&D program of MKE/KEIT. [K1002099, Non-polar epitaxy/chip for LED and 10040379, Development of 5W Full Color (R, G, B) Laser Diode & Module for Convergence Appliances]

Keywords

A1. Chemical etching
A3. Metalorganic chemical vapor deposition
B1. Semipolar GaN
B2. GaN substrate

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2011.11.014

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title = "Chemical lift-off of (1122) semipolar GaN using periodic triangular cavities",

abstract = "Chemical lift-off of (1122) semipolar GaN using triangular cavities was investigated. The (1122) semipolar GaN was grown using epitaxial lateral overgrowth by metal-organic chemical vapor deposition on m-plane sapphire, in such a way as to keep N terminated surface of c-plane GaN exposed in the cavities. After regrowing 300 μm thick (1122) semipolar GaN by hydride vapor phase epitaxy for a free-standing (1122) semipolar GaN substrate, the triangular cavities of the templates were chemically etched in molten KOH. The (000-2) plane in the triangular cavities can be etched in the [0002] direction with the high lateral etching rate of 196 μm/min. The resulting free-standing (1122) semipolar GaN substrate was confirmed to be strain-free by the Raman analysis.",

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author = "Jeon, {Dae Woo} and Lee, {Seung Jae} and Tak Jeong and Baek, {Jong Hyeob} and Park, {Jae Woo} and Jang, {Lee Woon} and Myoung Kim and Lee, {In Hwan} and Ju, {Jin Woo}",

note = "Funding Information: This work was supported by the IT R&D program of MKE/KEIT. [K1002099, Non-polar epitaxy/chip for LED and 10040379, Development of 5W Full Color (R, G, B) Laser Diode & Module for Convergence Appliances]",

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T1 - Chemical lift-off of (1122) semipolar GaN using periodic triangular cavities

AU - Jeon, Dae Woo

AU - Lee, Seung Jae

AU - Jeong, Tak

AU - Baek, Jong Hyeob

AU - Park, Jae Woo

AU - Jang, Lee Woon

AU - Kim, Myoung

AU - Lee, In Hwan

AU - Ju, Jin Woo

N1 - Funding Information: This work was supported by the IT R&D program of MKE/KEIT. [K1002099, Non-polar epitaxy/chip for LED and 10040379, Development of 5W Full Color (R, G, B) Laser Diode & Module for Convergence Appliances]

PY - 2012/1/1

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N2 - Chemical lift-off of (1122) semipolar GaN using triangular cavities was investigated. The (1122) semipolar GaN was grown using epitaxial lateral overgrowth by metal-organic chemical vapor deposition on m-plane sapphire, in such a way as to keep N terminated surface of c-plane GaN exposed in the cavities. After regrowing 300 μm thick (1122) semipolar GaN by hydride vapor phase epitaxy for a free-standing (1122) semipolar GaN substrate, the triangular cavities of the templates were chemically etched in molten KOH. The (000-2) plane in the triangular cavities can be etched in the [0002] direction with the high lateral etching rate of 196 μm/min. The resulting free-standing (1122) semipolar GaN substrate was confirmed to be strain-free by the Raman analysis.

AB - Chemical lift-off of (1122) semipolar GaN using triangular cavities was investigated. The (1122) semipolar GaN was grown using epitaxial lateral overgrowth by metal-organic chemical vapor deposition on m-plane sapphire, in such a way as to keep N terminated surface of c-plane GaN exposed in the cavities. After regrowing 300 μm thick (1122) semipolar GaN by hydride vapor phase epitaxy for a free-standing (1122) semipolar GaN substrate, the triangular cavities of the templates were chemically etched in molten KOH. The (000-2) plane in the triangular cavities can be etched in the [0002] direction with the high lateral etching rate of 196 μm/min. The resulting free-standing (1122) semipolar GaN substrate was confirmed to be strain-free by the Raman analysis.

KW - A1. Chemical etching

KW - A3. Metalorganic chemical vapor deposition

KW - B1. Semipolar GaN

KW - B2. GaN substrate

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ER -

Chemical lift-off of (1122) semipolar GaN using periodic triangular cavities

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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