Chemical lift-off of (1122) semipolar GaN using periodic triangular cavities

Dae Woo Jeon; Seung Jae Lee; Tak Jeong; Jong Hyeob Baek; Jae Woo Park; Lee Woon Jang; Myoung Kim; In Hwan Lee; Jin Woo Ju

doi:10.1016/j.jcrysgro.2011.11.014

Chemical lift-off of (1122) semipolar GaN using periodic triangular cavities

Dae Woo Jeon
, Seung Jae Lee
, Tak Jeong
, Jong Hyeob Baek
, Jae Woo Park
, Lee Woon Jang
, Myoung Kim
, In Hwan Lee
, Jin Woo Ju^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Chemical lift-off of (1122) semipolar GaN using triangular cavities was investigated. The (1122) semipolar GaN was grown using epitaxial lateral overgrowth by metal-organic chemical vapor deposition on m-plane sapphire, in such a way as to keep N terminated surface of c-plane GaN exposed in the cavities. After regrowing 300 μm thick (1122) semipolar GaN by hydride vapor phase epitaxy for a free-standing (1122) semipolar GaN substrate, the triangular cavities of the templates were chemically etched in molten KOH. The (000-2) plane in the triangular cavities can be etched in the [0002] direction with the high lateral etching rate of 196 μm/min. The resulting free-standing (1122) semipolar GaN substrate was confirmed to be strain-free by the Raman analysis.

Original language	English
Pages (from-to)	134-138
Number of pages	5
Journal	Journal of Crystal Growth
Volume	338
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.11.014
Publication status	Published - 2012 Jan 1
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by the IT R&D program of MKE/KEIT. [K1002099, Non-polar epitaxy/chip for LED and 10040379, Development of 5W Full Color (R, G, B) Laser Diode & Module for Convergence Appliances]

Keywords

A1. Chemical etching
A3. Metalorganic chemical vapor deposition
B1. Semipolar GaN
B2. GaN substrate

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2011.11.014

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title = "Chemical lift-off of (1122) semipolar GaN using periodic triangular cavities",

abstract = "Chemical lift-off of (1122) semipolar GaN using triangular cavities was investigated. The (1122) semipolar GaN was grown using epitaxial lateral overgrowth by metal-organic chemical vapor deposition on m-plane sapphire, in such a way as to keep N terminated surface of c-plane GaN exposed in the cavities. After regrowing 300 μm thick (1122) semipolar GaN by hydride vapor phase epitaxy for a free-standing (1122) semipolar GaN substrate, the triangular cavities of the templates were chemically etched in molten KOH. The (000-2) plane in the triangular cavities can be etched in the [0002] direction with the high lateral etching rate of 196 μm/min. The resulting free-standing (1122) semipolar GaN substrate was confirmed to be strain-free by the Raman analysis.",

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note = "Funding Information: This work was supported by the IT R\&D program of MKE/KEIT. [K1002099, Non-polar epitaxy/chip for LED and 10040379, Development of 5W Full Color (R, G, B) Laser Diode \& Module for Convergence Appliances]",

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doi = "10.1016/j.jcrysgro.2011.11.014",

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T1 - Chemical lift-off of (1122) semipolar GaN using periodic triangular cavities

AU - Jeon, Dae Woo

AU - Lee, Seung Jae

AU - Jeong, Tak

AU - Baek, Jong Hyeob

AU - Park, Jae Woo

AU - Jang, Lee Woon

AU - Kim, Myoung

AU - Lee, In Hwan

AU - Ju, Jin Woo

N1 - Funding Information: This work was supported by the IT R&D program of MKE/KEIT. [K1002099, Non-polar epitaxy/chip for LED and 10040379, Development of 5W Full Color (R, G, B) Laser Diode & Module for Convergence Appliances]

PY - 2012/1/1

Y1 - 2012/1/1

N2 - Chemical lift-off of (1122) semipolar GaN using triangular cavities was investigated. The (1122) semipolar GaN was grown using epitaxial lateral overgrowth by metal-organic chemical vapor deposition on m-plane sapphire, in such a way as to keep N terminated surface of c-plane GaN exposed in the cavities. After regrowing 300 μm thick (1122) semipolar GaN by hydride vapor phase epitaxy for a free-standing (1122) semipolar GaN substrate, the triangular cavities of the templates were chemically etched in molten KOH. The (000-2) plane in the triangular cavities can be etched in the [0002] direction with the high lateral etching rate of 196 μm/min. The resulting free-standing (1122) semipolar GaN substrate was confirmed to be strain-free by the Raman analysis.

AB - Chemical lift-off of (1122) semipolar GaN using triangular cavities was investigated. The (1122) semipolar GaN was grown using epitaxial lateral overgrowth by metal-organic chemical vapor deposition on m-plane sapphire, in such a way as to keep N terminated surface of c-plane GaN exposed in the cavities. After regrowing 300 μm thick (1122) semipolar GaN by hydride vapor phase epitaxy for a free-standing (1122) semipolar GaN substrate, the triangular cavities of the templates were chemically etched in molten KOH. The (000-2) plane in the triangular cavities can be etched in the [0002] direction with the high lateral etching rate of 196 μm/min. The resulting free-standing (1122) semipolar GaN substrate was confirmed to be strain-free by the Raman analysis.

KW - A1. Chemical etching

KW - A3. Metalorganic chemical vapor deposition

KW - B1. Semipolar GaN

KW - B2. GaN substrate

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DO - 10.1016/j.jcrysgro.2011.11.014

M3 - Article

AN - SCOPUS:84655165000

SN - 0022-0248

VL - 338

SP - 134

EP - 138

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Chemical lift-off of (1122) semipolar GaN using periodic triangular cavities

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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