Chemical vapor deposition of cobalt using novel cobalt(I) precursors

Hyungsoo Choi, Sungho Park, Ho G. Jang

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The deposition of cobalt thin films from cobalt hydride complexes, HCo[P(OR)3]4, where R = methyl, ethyl, i-propyl, and n-butyl, by a chemical vapor deposition method is reported. The new cobalt precursors deposited high-purity cobalt films at substrate temperatures as low as 300 °C without employing hydrogen. The deposited Co films showed smooth and dense surface morphology. The microstructure and growth rate of the deposited films depended on the reaction conditions such as substrate temperature and precursor feed. No gas phase reactions were observed during the deposition process.

Original languageEnglish
Pages (from-to)267-270
Number of pages4
JournalJournal of Materials Research
Volume17
Issue number2
DOIs
Publication statusPublished - 2002 Feb

Bibliographical note

Funding Information:
This work was supported by the National Science Foundation under Grant No. CHE-9973575. S. Park was supported by the Office of Naval Research and CRM-KOSEF (2001). We thank the Center for Microanalysis of Materials of Frederick Seitz Materials Research Laboratory at University of Illinois at Urbana-Champaign for the use of SEM and XPS.

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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