Abstract
Light extraction of microscale light-emitting diodes (μLEDs) is fundamentally limited by p-type metal electrodes for current injection due to the small pixel size of the LEDs. We propose Cr/Ni-doped silicon oxide (CN-SiO X ) films as p-type contact electrodes for blue μLEDs to increase the light-output power under the same emitting areas. The conductivity of CN-SiO X electrode originates from the diffusion of top Cr/Ni atoms via electric-field-induced doping treatments, which allows for effective hole injection into the active layer. Consequently, we achieved a 62% improvement in the current density and a 47% increase in the light-output power compared to ITO-based μLEDs.
Original language | English |
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Pages (from-to) | 40967-40972 |
Number of pages | 6 |
Journal | ACS Applied Materials and Interfaces |
Volume | 10 |
Issue number | 48 |
DOIs | |
Publication status | Published - 2018 Dec 5 |
Keywords
- Schottky barrier height
- electrical doping treatment
- hole injection
- microscale light-emitting diodes
- silicon oxide
- transmittance
ASJC Scopus subject areas
- Materials Science(all)