Abstract
Light extraction of microscale light-emitting diodes (μLEDs) is fundamentally limited by p-type metal electrodes for current injection due to the small pixel size of the LEDs. We propose Cr/Ni-doped silicon oxide (CN-SiO X ) films as p-type contact electrodes for blue μLEDs to increase the light-output power under the same emitting areas. The conductivity of CN-SiO X electrode originates from the diffusion of top Cr/Ni atoms via electric-field-induced doping treatments, which allows for effective hole injection into the active layer. Consequently, we achieved a 62% improvement in the current density and a 47% increase in the light-output power compared to ITO-based μLEDs.
| Original language | English |
|---|---|
| Pages (from-to) | 40967-40972 |
| Number of pages | 6 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 10 |
| Issue number | 48 |
| DOIs | |
| Publication status | Published - 2018 Dec 5 |
Bibliographical note
Funding Information:This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korea government (No.2016R1A3B 1908249). The authors are grateful for the support of Ji-Eun Moon in the design of the table of contents graphics.
Publisher Copyright:
© 2018 American Chemical Society.
Keywords
- Schottky barrier height
- electrical doping treatment
- hole injection
- microscale light-emitting diodes
- silicon oxide
- transmittance
ASJC Scopus subject areas
- General Materials Science