Chromium/Nickel-Doped Silicon Oxide Thin-Film Electrode: Mechanism and Application to Microscale Light-Emitting Diodes

Kyung Rock Son; Byeong Ryong Lee; Tae Geun Kim

doi:10.1021/acsami.8b15364

Chromium/Nickel-Doped Silicon Oxide Thin-Film Electrode: Mechanism and Application to Microscale Light-Emitting Diodes

Kyung Rock Son, Byeong Ryong Lee, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Light extraction of microscale light-emitting diodes (μLEDs) is fundamentally limited by p-type metal electrodes for current injection due to the small pixel size of the LEDs. We propose Cr/Ni-doped silicon oxide (CN-SiO _X ) films as p-type contact electrodes for blue μLEDs to increase the light-output power under the same emitting areas. The conductivity of CN-SiO _X electrode originates from the diffusion of top Cr/Ni atoms via electric-field-induced doping treatments, which allows for effective hole injection into the active layer. Consequently, we achieved a 62% improvement in the current density and a 47% increase in the light-output power compared to ITO-based μLEDs.

Original language	English
Pages (from-to)	40967-40972
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	48
DOIs	https://doi.org/10.1021/acsami.8b15364
Publication status	Published - 2018 Dec 5

Keywords

Schottky barrier height
electrical doping treatment
hole injection
microscale light-emitting diodes
silicon oxide
transmittance

ASJC Scopus subject areas

Materials Science(all)

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10.1021/acsami.8b15364

Cite this

@article{e51e8574d75740f2b3c9a68a8cec3d97,

title = "Chromium/Nickel-Doped Silicon Oxide Thin-Film Electrode: Mechanism and Application to Microscale Light-Emitting Diodes",

abstract = " Light extraction of microscale light-emitting diodes (μLEDs) is fundamentally limited by p-type metal electrodes for current injection due to the small pixel size of the LEDs. We propose Cr/Ni-doped silicon oxide (CN-SiO X ) films as p-type contact electrodes for blue μLEDs to increase the light-output power under the same emitting areas. The conductivity of CN-SiO X electrode originates from the diffusion of top Cr/Ni atoms via electric-field-induced doping treatments, which allows for effective hole injection into the active layer. Consequently, we achieved a 62% improvement in the current density and a 47% increase in the light-output power compared to ITO-based μLEDs. ",

keywords = "Schottky barrier height, electrical doping treatment, hole injection, microscale light-emitting diodes, silicon oxide, transmittance",

author = "Son, {Kyung Rock} and Lee, {Byeong Ryong} and Kim, {Tae Geun}",

note = "Funding Information: This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korea government (No.2016R1A3B 1908249). The authors are grateful for the support of Ji-Eun Moon in the design of the table of contents graphics. Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

year = "2018",

month = dec,

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doi = "10.1021/acsami.8b15364",

language = "English",

volume = "10",

pages = "40967--40972",

journal = "ACS applied materials & interfaces",

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T1 - Chromium/Nickel-Doped Silicon Oxide Thin-Film Electrode

T2 - Mechanism and Application to Microscale Light-Emitting Diodes

AU - Son, Kyung Rock

AU - Lee, Byeong Ryong

AU - Kim, Tae Geun

N1 - Funding Information: This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korea government (No.2016R1A3B 1908249). The authors are grateful for the support of Ji-Eun Moon in the design of the table of contents graphics. Publisher Copyright: © 2018 American Chemical Society.

PY - 2018/12/5

Y1 - 2018/12/5

N2 - Light extraction of microscale light-emitting diodes (μLEDs) is fundamentally limited by p-type metal electrodes for current injection due to the small pixel size of the LEDs. We propose Cr/Ni-doped silicon oxide (CN-SiO X ) films as p-type contact electrodes for blue μLEDs to increase the light-output power under the same emitting areas. The conductivity of CN-SiO X electrode originates from the diffusion of top Cr/Ni atoms via electric-field-induced doping treatments, which allows for effective hole injection into the active layer. Consequently, we achieved a 62% improvement in the current density and a 47% increase in the light-output power compared to ITO-based μLEDs.

AB - Light extraction of microscale light-emitting diodes (μLEDs) is fundamentally limited by p-type metal electrodes for current injection due to the small pixel size of the LEDs. We propose Cr/Ni-doped silicon oxide (CN-SiO X ) films as p-type contact electrodes for blue μLEDs to increase the light-output power under the same emitting areas. The conductivity of CN-SiO X electrode originates from the diffusion of top Cr/Ni atoms via electric-field-induced doping treatments, which allows for effective hole injection into the active layer. Consequently, we achieved a 62% improvement in the current density and a 47% increase in the light-output power compared to ITO-based μLEDs.

KW - Schottky barrier height

KW - electrical doping treatment

KW - hole injection

KW - microscale light-emitting diodes

KW - silicon oxide

KW - transmittance

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DO - 10.1021/acsami.8b15364

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SN - 1944-8244

VL - 10

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EP - 40972

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

IS - 48

ER -

Chromium/Nickel-Doped Silicon Oxide Thin-Film Electrode: Mechanism and Application to Microscale Light-Emitting Diodes

Abstract

Keywords

ASJC Scopus subject areas

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