Chromium/Nickel-Doped Silicon Oxide Thin-Film Electrode: Mechanism and Application to Microscale Light-Emitting Diodes

Kyung Rock Son, Byeong Ryong Lee, Tae Geun Kim

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)

    Abstract

    Light extraction of microscale light-emitting diodes (μLEDs) is fundamentally limited by p-type metal electrodes for current injection due to the small pixel size of the LEDs. We propose Cr/Ni-doped silicon oxide (CN-SiO X ) films as p-type contact electrodes for blue μLEDs to increase the light-output power under the same emitting areas. The conductivity of CN-SiO X electrode originates from the diffusion of top Cr/Ni atoms via electric-field-induced doping treatments, which allows for effective hole injection into the active layer. Consequently, we achieved a 62% improvement in the current density and a 47% increase in the light-output power compared to ITO-based μLEDs.

    Original languageEnglish
    Pages (from-to)40967-40972
    Number of pages6
    JournalACS Applied Materials and Interfaces
    Volume10
    Issue number48
    DOIs
    Publication statusPublished - 2018 Dec 5

    Bibliographical note

    Funding Information:
    This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korea government (No.2016R1A3B 1908249). The authors are grateful for the support of Ji-Eun Moon in the design of the table of contents graphics.

    Publisher Copyright:
    © 2018 American Chemical Society.

    Keywords

    • Schottky barrier height
    • electrical doping treatment
    • hole injection
    • microscale light-emitting diodes
    • silicon oxide
    • transmittance

    ASJC Scopus subject areas

    • General Materials Science

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