Coherent scattering stereoscopic microscopy for mask inspection of extreme ultra-violet lithography

Ki Hyuk Kim, Jung Guen Jo, Min Chul Park, Byeong Kwon Ju, Sungjin Cho, Jung Young Son

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)


Recently, mask inspection for extreme ultraviolet lithography has been in the spotlight as the next-generation lithography technique in the field of semiconductor production. This technology is used to make semiconductors more delicate even as they become tinier. In mask inspection, defect sizes and locations are major factors for aggravating mask defects which cause errors on wafer patterns. This paper addresses a simulated solution of coherent scattering stereoscopic microscopy for considering the mitigation of mask defects. To perform the inspection of mask defects for the stereoscopic microscopy, we construct a stereo aerial image with a disparity map produced by a Hybrid input-output algorithm and disparity estimation methods. Preliminary results show that mask inspection by coherent scattering stereoscopic microscopy is expected to be performed in a more accurate way compared to 2D mask inspection.

Original languageEnglish
Title of host publicationThree-Dimensional Imaging, Visualization, and Display 2013
Publication statusPublished - 2013
EventThree-Dimensional Imaging, Visualization, and Display 2013 - Baltimore, MD, United States
Duration: 2013 Apr 292013 Apr 30

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


OtherThree-Dimensional Imaging, Visualization, and Display 2013
Country/TerritoryUnited States
CityBaltimore, MD


  • Extreme ultraviolet lithography
  • Mask inspection
  • Microscopy
  • Stereoscopic

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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