Cold cathode x-ray source fabricated by the CNT point emitter

Sang Heon Lee; Jun Soo Han; Han Bin Go; Cheol Jin Lee

doi:10.1109/IVNC.2017.8051549

Cold cathode x-ray source fabricated by the CNT point emitter

Sang Heon Lee
, Jun Soo Han
, Han Bin Go
, Cheol Jin Lee^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The cold cathode x-ray source was fabricated by using the point-type CNT film emitter. The CNT x-ray source consists of the CNT point emitter, the metal mesh gate electrode and the tungsten target anode electrode. Those components were mounted in a small vacuum chamber. The fabricated CNT x-ray source shows a high resolution x-ray image at a low anode current and at a low anode voltage compared to conventional thermionic x-ray sources. The achieved high performance of the cold cathode x-ray source is caused by high density electron beam emitted from the point-type CNT film emitter. Our results indicated that the point-type CNT film emitter is very useful for the CNT based cold cathode x-ray sources.

Original language	English
Title of host publication	2017 30th International Vacuum Nanoelectronics Conference, IVNC 2017
Editors	Christoph Langer, Robert Lawrowski
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	64-65
Number of pages	2
ISBN (Electronic)	9781509039753
DOIs	https://doi.org/10.1109/IVNC.2017.8051549
Publication status	Published - 2017 Sept 26
Event	30th International Vacuum Nanoelectronics Conference, IVNC 2017 - Regensburg, Germany Duration: 2017 Jul 10 → 2017 Jul 14

Publication series

Name	2017 30th International Vacuum Nanoelectronics Conference, IVNC 2017

Other

Other	30th International Vacuum Nanoelectronics Conference, IVNC 2017
Country/Territory	Germany
City	Regensburg
Period	17/7/10 → 17/7/14

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This work was supported by the Brain Korea 21 Plus Project (T1300305) through the Ministry of Education in Korea.

Publisher Copyright:
© 2017 IEEE.

Keywords

carbon nanotube field emitter
cold cathode x-ray source
metal mesh gate electrode
tungsten anode electrode

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/IVNC.2017.8051549

Cite this

Lee, S. H., Han, J. S., Go, H. B., & Lee, C. J. (2017). Cold cathode x-ray source fabricated by the CNT point emitter. In C. Langer, & R. Lawrowski (Eds.), 2017 30th International Vacuum Nanoelectronics Conference, IVNC 2017 (pp. 64-65). Article 8051549 (2017 30th International Vacuum Nanoelectronics Conference, IVNC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVNC.2017.8051549

Cold cathode x-ray source fabricated by the CNT point emitter. / Lee, Sang Heon; Han, Jun Soo; Go, Han Bin et al.
2017 30th International Vacuum Nanoelectronics Conference, IVNC 2017. ed. / Christoph Langer; Robert Lawrowski. Institute of Electrical and Electronics Engineers Inc., 2017. p. 64-65 8051549 (2017 30th International Vacuum Nanoelectronics Conference, IVNC 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, SH, Han, JS, Go, HB & Lee, CJ 2017, Cold cathode x-ray source fabricated by the CNT point emitter. in C Langer & R Lawrowski (eds), 2017 30th International Vacuum Nanoelectronics Conference, IVNC 2017., 8051549, 2017 30th International Vacuum Nanoelectronics Conference, IVNC 2017, Institute of Electrical and Electronics Engineers Inc., pp. 64-65, 30th International Vacuum Nanoelectronics Conference, IVNC 2017, Regensburg, Germany, 17/7/10. https://doi.org/10.1109/IVNC.2017.8051549

Lee SH, Han JS, Go HB, Lee CJ. Cold cathode x-ray source fabricated by the CNT point emitter. In Langer C, Lawrowski R, editors, 2017 30th International Vacuum Nanoelectronics Conference, IVNC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 64-65. 8051549. (2017 30th International Vacuum Nanoelectronics Conference, IVNC 2017). doi: 10.1109/IVNC.2017.8051549

Lee, Sang Heon ; Han, Jun Soo ; Go, Han Bin et al. / Cold cathode x-ray source fabricated by the CNT point emitter. 2017 30th International Vacuum Nanoelectronics Conference, IVNC 2017. editor / Christoph Langer ; Robert Lawrowski. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 64-65 (2017 30th International Vacuum Nanoelectronics Conference, IVNC 2017).

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title = "Cold cathode x-ray source fabricated by the CNT point emitter",

abstract = "The cold cathode x-ray source was fabricated by using the point-type CNT film emitter. The CNT x-ray source consists of the CNT point emitter, the metal mesh gate electrode and the tungsten target anode electrode. Those components were mounted in a small vacuum chamber. The fabricated CNT x-ray source shows a high resolution x-ray image at a low anode current and at a low anode voltage compared to conventional thermionic x-ray sources. The achieved high performance of the cold cathode x-ray source is caused by high density electron beam emitted from the point-type CNT film emitter. Our results indicated that the point-type CNT film emitter is very useful for the CNT based cold cathode x-ray sources.",

keywords = "carbon nanotube field emitter, cold cathode x-ray source, metal mesh gate electrode, tungsten anode electrode",

author = "Lee, \{Sang Heon\} and Han, \{Jun Soo\} and Go, \{Han Bin\} and Lee, \{Cheol Jin\}",

note = "Funding Information: ACKNOWLEDGMENT This work was supported by the Brain Korea 21 Plus Project (T1300305) through the Ministry of Education in Korea. Publisher Copyright: {\textcopyright} 2017 IEEE.; 30th International Vacuum Nanoelectronics Conference, IVNC 2017 ; Conference date: 10-07-2017 Through 14-07-2017",

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doi = "10.1109/IVNC.2017.8051549",

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T1 - Cold cathode x-ray source fabricated by the CNT point emitter

AU - Lee, Sang Heon

AU - Han, Jun Soo

AU - Go, Han Bin

AU - Lee, Cheol Jin

PY - 2017/9/26

Y1 - 2017/9/26

N2 - The cold cathode x-ray source was fabricated by using the point-type CNT film emitter. The CNT x-ray source consists of the CNT point emitter, the metal mesh gate electrode and the tungsten target anode electrode. Those components were mounted in a small vacuum chamber. The fabricated CNT x-ray source shows a high resolution x-ray image at a low anode current and at a low anode voltage compared to conventional thermionic x-ray sources. The achieved high performance of the cold cathode x-ray source is caused by high density electron beam emitted from the point-type CNT film emitter. Our results indicated that the point-type CNT film emitter is very useful for the CNT based cold cathode x-ray sources.

AB - The cold cathode x-ray source was fabricated by using the point-type CNT film emitter. The CNT x-ray source consists of the CNT point emitter, the metal mesh gate electrode and the tungsten target anode electrode. Those components were mounted in a small vacuum chamber. The fabricated CNT x-ray source shows a high resolution x-ray image at a low anode current and at a low anode voltage compared to conventional thermionic x-ray sources. The achieved high performance of the cold cathode x-ray source is caused by high density electron beam emitted from the point-type CNT film emitter. Our results indicated that the point-type CNT film emitter is very useful for the CNT based cold cathode x-ray sources.

KW - carbon nanotube field emitter

KW - cold cathode x-ray source

KW - metal mesh gate electrode

KW - tungsten anode electrode

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DO - 10.1109/IVNC.2017.8051549

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SP - 64

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BT - 2017 30th International Vacuum Nanoelectronics Conference, IVNC 2017

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PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 30th International Vacuum Nanoelectronics Conference, IVNC 2017

Y2 - 10 July 2017 through 14 July 2017

ER -

Cold cathode x-ray source fabricated by the CNT point emitter

Abstract

Publication series

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Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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