Collector vertical scaling and performance tradeoffs in 300 GHz SiGe HBTs

J. S. Rieh; M. Khater; K. T. Schonenberg; F. Pagette; P. Smith; T. N. Adam; K. Stein; D. Ahlgren; G. Freeman

doi:10.1109/DRC.2004.1367884

Collector vertical scaling and performance tradeoffs in 300 GHz SiGe HBTs

J. S. Rieh, M. Khater, K. T. Schonenberg, F. Pagette, P. Smith, T. N. Adam, K. Stein, D. Ahlgren, G. Freeman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

The impact of the collector vertical scaling on the tradeoff between f _t and f _max, with SiGe Heterojunction Bipolar Transistors (BPT) of ∼300 GHz performance was discussed. Its impact on the avalanche breakdown behavior of the devices was also discussed. It was observed that the SIC dose variation affects f _T and f _max in opposite directions in 300 GHz SiGe HBTs. The SIC dose variation can be exploited to selectively optimize the devices for either f _T or f _max, depending on the requirement from a given application.

Original language	English
Title of host publication	Device Research Conference - Conference Digest, 62nd DRC
Pages	235-236
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2004.1367884
Publication status	Published - 2004
Externally published	Yes
Event	Device Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States Duration: 2004 Jun 21 → 2004 Jun 23

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	Device Research Conference - Conference Digest, 62nd DRC
Country/Territory	United States
City	Notre Dame, IN
Period	04/6/21 → 04/6/23

ASJC Scopus subject areas

Engineering(all)

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10.1109/DRC.2004.1367884

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Rieh, J. S., Khater, M., Schonenberg, K. T., Pagette, F., Smith, P., Adam, T. N., Stein, K., Ahlgren, D., & Freeman, G. (2004). Collector vertical scaling and performance tradeoffs in 300 GHz SiGe HBTs. In Device Research Conference - Conference Digest, 62nd DRC (pp. 235-236). [VII.B.-1] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2004.1367884

Rieh, JS, Khater, M, Schonenberg, KT, Pagette, F, Smith, P, Adam, TN, Stein, K, Ahlgren, D & Freeman, G 2004, Collector vertical scaling and performance tradeoffs in 300 GHz SiGe HBTs. in Device Research Conference - Conference Digest, 62nd DRC., VII.B.-1, Device Research Conference - Conference Digest, DRC, pp. 235-236, Device Research Conference - Conference Digest, 62nd DRC, Notre Dame, IN, United States, 04/6/21. https://doi.org/10.1109/DRC.2004.1367884

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title = "Collector vertical scaling and performance tradeoffs in 300 GHz SiGe HBTs",

abstract = "The impact of the collector vertical scaling on the tradeoff between f t and f max, with SiGe Heterojunction Bipolar Transistors (BPT) of ∼300 GHz performance was discussed. Its impact on the avalanche breakdown behavior of the devices was also discussed. It was observed that the SIC dose variation affects f T and f max in opposite directions in 300 GHz SiGe HBTs. The SIC dose variation can be exploited to selectively optimize the devices for either f T or f max, depending on the requirement from a given application.",

author = "Rieh, {J. S.} and M. Khater and Schonenberg, {K. T.} and F. Pagette and P. Smith and Adam, {T. N.} and K. Stein and D. Ahlgren and G. Freeman",

year = "2004",

doi = "10.1109/DRC.2004.1367884",

language = "English",

isbn = "0780382846",

series = "Device Research Conference - Conference Digest, DRC",

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booktitle = "Device Research Conference - Conference Digest, 62nd DRC",

note = "Device Research Conference - Conference Digest, 62nd DRC ; Conference date: 21-06-2004 Through 23-06-2004",

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AU - Rieh, J. S.

AU - Khater, M.

AU - Schonenberg, K. T.

AU - Pagette, F.

AU - Smith, P.

AU - Adam, T. N.

AU - Stein, K.

AU - Ahlgren, D.

AU - Freeman, G.

PY - 2004

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N2 - The impact of the collector vertical scaling on the tradeoff between f t and f max, with SiGe Heterojunction Bipolar Transistors (BPT) of ∼300 GHz performance was discussed. Its impact on the avalanche breakdown behavior of the devices was also discussed. It was observed that the SIC dose variation affects f T and f max in opposite directions in 300 GHz SiGe HBTs. The SIC dose variation can be exploited to selectively optimize the devices for either f T or f max, depending on the requirement from a given application.

AB - The impact of the collector vertical scaling on the tradeoff between f t and f max, with SiGe Heterojunction Bipolar Transistors (BPT) of ∼300 GHz performance was discussed. Its impact on the avalanche breakdown behavior of the devices was also discussed. It was observed that the SIC dose variation affects f T and f max in opposite directions in 300 GHz SiGe HBTs. The SIC dose variation can be exploited to selectively optimize the devices for either f T or f max, depending on the requirement from a given application.

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BT - Device Research Conference - Conference Digest, 62nd DRC

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Y2 - 21 June 2004 through 23 June 2004

ER -

Collector vertical scaling and performance tradeoffs in 300 GHz SiGe HBTs

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