Color emission and dielectric properties of Eu-doped Gd2O 3 gate oxide thin films

Sungho Choi, Byung Yoon Park, Taek Ahn, Ji Young Kim, Chang Seop Hong, Mi Hye Yi, Ha Kyun Jung

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


High-k Gd2O3 used for thin film transistor (TFT) gate insulators has been synthesized via a simple solution process. Phase analysis and capacitive performance reveal that a high dielectric constant of ∼ 20 and a low leakage current level of < 10-8 A/cm2 at 1 MV/cm with a good transparency under the visible wavelength region are readily produced by the sol-gel method. Eu3+ doping leads to an increased dielectric constant induced by the additional electric dipole transition, which is evidently visualized by the photoluminescence behavior and/or by the defect-controlled thin film microstructures. Thus, the solution-processed (Gd,Eu)2O3 film is a viable gate insulator to be considered for the proposed "color emissive" switching devices as well as for the low power-driven TFT devices.

Original languageEnglish
Pages (from-to)3272-3275
Number of pages4
JournalThin Solid Films
Issue number10
Publication statusPublished - 2011 Mar 1

Bibliographical note

Funding Information:
This research was supported by a grant (Code no. F0004073-2010-33 ) from the Information Display R&D Center , one of the Knowledge Economy Frontier R&D Program funded by the Ministry of Knowledge Economy of the Korean government.

Copyright 2011 Elsevier B.V., All rights reserved.


  • Capacitance voltage
  • Dielectric properties
  • Gadolinium oxide
  • Photoluminescence
  • Rare earth doping
  • Sol-gel

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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