High-k Gd2O3 used for thin film transistor (TFT) gate insulators has been synthesized via a simple solution process. Phase analysis and capacitive performance reveal that a high dielectric constant of ∼ 20 and a low leakage current level of < 10-8 A/cm2 at 1 MV/cm with a good transparency under the visible wavelength region are readily produced by the sol-gel method. Eu3+ doping leads to an increased dielectric constant induced by the additional electric dipole transition, which is evidently visualized by the photoluminescence behavior and/or by the defect-controlled thin film microstructures. Thus, the solution-processed (Gd,Eu)2O3 film is a viable gate insulator to be considered for the proposed "color emissive" switching devices as well as for the low power-driven TFT devices.
Bibliographical noteFunding Information:
This research was supported by a grant (Code no. F0004073-2010-33 ) from the Information Display R&D Center , one of the Knowledge Economy Frontier R&D Program funded by the Ministry of Knowledge Economy of the Korean government.
Copyright 2011 Elsevier B.V., All rights reserved.
- Capacitance voltage
- Dielectric properties
- Gadolinium oxide
- Rare earth doping
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry