Compact and low-loss wilkinson power divider using a high-Q spiral inductor on a sapphire substrate

Tae Woong Yoon, Dong Su Kim, Jong Min Yook

    Research output: Contribution to journalArticlepeer-review

    Abstract

    In this article, a high-performance Wilkinson power divider (WPD) using lumped elements on a sapphire substrate is presented. The proposed WPD is achieved by replacing the transmission line of the conventional WPD with a π-type equivalent circuit. It has a thick metal spiral inductor, and an organic layer, with thicknesses of 40 and 60 μm, respectively, and the Q-factor was 47 at 2 GHz. The measurement result shows excellent RF performance with return loss (S11) and isolation (S21) better than 15 and 12 dB, respectively, and the average insertion loss is lower than 0.3 dB in the operating bandwidths of 3.2 to 4.2 GHz and 6.3 to 10 GHz.

    Original languageEnglish
    Pages (from-to)1703-1707
    Number of pages5
    JournalMicrowave and Optical Technology Letters
    Volume60
    Issue number7
    DOIs
    Publication statusPublished - 2018 Jul

    Keywords

    • Wilkinson power divider
    • high-Q inductor
    • integrated passive devices
    • sapphire wafer
    • thin-film devices

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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