Compact and low-loss wilkinson power divider using a high-Q spiral inductor on a sapphire substrate

Tae Woong Yoon; Dong Su Kim; Jong Min Yook

doi:10.1002/mop.31225

Compact and low-loss wilkinson power divider using a high-Q spiral inductor on a sapphire substrate

Tae Woong Yoon, Dong Su Kim, Jong Min Yook

Research output: Contribution to journal › Article › peer-review

Abstract

In this article, a high-performance Wilkinson power divider (WPD) using lumped elements on a sapphire substrate is presented. The proposed WPD is achieved by replacing the transmission line of the conventional WPD with a π-type equivalent circuit. It has a thick metal spiral inductor, and an organic layer, with thicknesses of 40 and 60 μm, respectively, and the Q-factor was 47 at 2 GHz. The measurement result shows excellent RF performance with return loss (S₁₁) and isolation (S₂₁) better than 15 and 12 dB, respectively, and the average insertion loss is lower than 0.3 dB in the operating bandwidths of 3.2 to 4.2 GHz and 6.3 to 10 GHz.

Original language	English
Pages (from-to)	1703-1707
Number of pages	5
Journal	Microwave and Optical Technology Letters
Volume	60
Issue number	7
DOIs	https://doi.org/10.1002/mop.31225
Publication status	Published - 2018 Jul

Keywords

Wilkinson power divider
high-Q inductor
integrated passive devices
sapphire wafer
thin-film devices

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1002/mop.31225

Cite this

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title = "Compact and low-loss wilkinson power divider using a high-Q spiral inductor on a sapphire substrate",

abstract = "In this article, a high-performance Wilkinson power divider (WPD) using lumped elements on a sapphire substrate is presented. The proposed WPD is achieved by replacing the transmission line of the conventional WPD with a π-type equivalent circuit. It has a thick metal spiral inductor, and an organic layer, with thicknesses of 40 and 60 μm, respectively, and the Q-factor was 47 at 2 GHz. The measurement result shows excellent RF performance with return loss (S11) and isolation (S21) better than 15 and 12 dB, respectively, and the average insertion loss is lower than 0.3 dB in the operating bandwidths of 3.2 to 4.2 GHz and 6.3 to 10 GHz.",

keywords = "Wilkinson power divider, high-Q inductor, integrated passive devices, sapphire wafer, thin-film devices",

author = "Yoon, {Tae Woong} and Kim, {Dong Su} and Yook, {Jong Min}",

year = "2018",

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T1 - Compact and low-loss wilkinson power divider using a high-Q spiral inductor on a sapphire substrate

AU - Yoon, Tae Woong

AU - Kim, Dong Su

AU - Yook, Jong Min

PY - 2018/7

Y1 - 2018/7

N2 - In this article, a high-performance Wilkinson power divider (WPD) using lumped elements on a sapphire substrate is presented. The proposed WPD is achieved by replacing the transmission line of the conventional WPD with a π-type equivalent circuit. It has a thick metal spiral inductor, and an organic layer, with thicknesses of 40 and 60 μm, respectively, and the Q-factor was 47 at 2 GHz. The measurement result shows excellent RF performance with return loss (S11) and isolation (S21) better than 15 and 12 dB, respectively, and the average insertion loss is lower than 0.3 dB in the operating bandwidths of 3.2 to 4.2 GHz and 6.3 to 10 GHz.

AB - In this article, a high-performance Wilkinson power divider (WPD) using lumped elements on a sapphire substrate is presented. The proposed WPD is achieved by replacing the transmission line of the conventional WPD with a π-type equivalent circuit. It has a thick metal spiral inductor, and an organic layer, with thicknesses of 40 and 60 μm, respectively, and the Q-factor was 47 at 2 GHz. The measurement result shows excellent RF performance with return loss (S11) and isolation (S21) better than 15 and 12 dB, respectively, and the average insertion loss is lower than 0.3 dB in the operating bandwidths of 3.2 to 4.2 GHz and 6.3 to 10 GHz.

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KW - high-Q inductor

KW - integrated passive devices

KW - sapphire wafer

KW - thin-film devices

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Compact and low-loss wilkinson power divider using a high-Q spiral inductor on a sapphire substrate

Abstract

Keywords

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