Comparative study on the properties of amorphous carbon layers deposited from 1-hexene and propylene for dry etch hard mask application in semiconductor device manufacturing

Seungmoo Lee; Jaihyung Won; Jongsik Choi; Jihun Park; Yeonhong Jee; Hyeondeok Lee; Dongjin Byun

doi:10.1016/j.tsf.2011.04.077

Comparative study on the properties of amorphous carbon layers deposited from 1-hexene and propylene for dry etch hard mask application in semiconductor device manufacturing

Seungmoo Lee, Jaihyung Won, Jongsik Choi, Jihun Park, Yeonhong Jee, Hyeondeok Lee, Dongjin Byun

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Amorphous carbon layers (ACLs) were prepared by plasma enhanced chemical vapor deposition (PECVD) from 1-hexene (C₆H₁₂) and propylene (C₃H₆) as a carbon source at different temperatures for dry etch hard mask of semiconductor devices manufacturing process. The deposition rate of ACL deposited at 550 °C from C ₆H₁₂ and C₃H₆ was 5050 Å/min and 6360 Å/min. Although the deposition rate of ACL deposited from C ₆H₆ was lower than that from C₃H₆, normalized deposition rate of ACL deposited from C₆H₁₂ was 1.64 times higher than that from C₃H₆. The relative amount of hydrocarbon contents measured by FTIR (Fourier transformation infrared) and TDS (thermal desorption spectroscopy) was decreased with the increase of deposition temperature. Raman results showed that the numbers and size of graphite cluster of ACLs deposited from each source were increased with the increase of deposition temperature. The extinction coefficient of ACL deposited at 550 °C from C₆H₁₂ was 0.51 and that from C₃H₆ was 0.48. The density of ACL deposited at 550 °C from C₆H₁₂ was 1.48 g/cm³ and that from C ₃H₆ was 1.45 g/cm³. The dry etching rate of ACL deposited at 550 °C from C₆H₁₂ was 1770 Å/min and that from C₃H₆ was 1840 Å/min. The deposition rate, dry etch rate and the amount of hydrocarbon contents of ACLs deposited from each carbon source were decreased with the increase of deposition temperature but extinction coefficient and density were increased with the increase of deposition temperature. We concluded that the variation behavior of the deposition characteristics and film properties of ACLs from C ₆H₁₂ with the increase of deposition temperature was the same as those of ACLs from C₃H₆. The high density and low dry etch rate of ACL from C₆H₁₂ can be explained by less hydrocarbon incorporation during deposition and these properties are more favorable for the dry etch hard mask application in semiconductor device fabrication. Crown

Original language	English
Pages (from-to)	6683-6687
Number of pages	5
Journal	Thin Solid Films
Volume	519
Issue number	20
DOIs	https://doi.org/10.1016/j.tsf.2011.04.077
Publication status	Published - 2011 Aug 1

Keywords

ACL
CH
Dry etch
Hard mask
PECVD
Semiconductor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2011.04.077

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@article{113f380f4d004dd7820d3e39ab8e1dd8,

title = "Comparative study on the properties of amorphous carbon layers deposited from 1-hexene and propylene for dry etch hard mask application in semiconductor device manufacturing",

abstract = "Amorphous carbon layers (ACLs) were prepared by plasma enhanced chemical vapor deposition (PECVD) from 1-hexene (C6H12) and propylene (C3H6) as a carbon source at different temperatures for dry etch hard mask of semiconductor devices manufacturing process. The deposition rate of ACL deposited at 550 °C from C 6H12 and C3H6 was 5050 {\AA}/min and 6360 {\AA}/min. Although the deposition rate of ACL deposited from C 6H6 was lower than that from C3H6, normalized deposition rate of ACL deposited from C6H12 was 1.64 times higher than that from C3H6. The relative amount of hydrocarbon contents measured by FTIR (Fourier transformation infrared) and TDS (thermal desorption spectroscopy) was decreased with the increase of deposition temperature. Raman results showed that the numbers and size of graphite cluster of ACLs deposited from each source were increased with the increase of deposition temperature. The extinction coefficient of ACL deposited at 550 °C from C6H12 was 0.51 and that from C3H6 was 0.48. The density of ACL deposited at 550 °C from C6H12 was 1.48 g/cm3 and that from C 3H6 was 1.45 g/cm3. The dry etching rate of ACL deposited at 550 °C from C6H12 was 1770 {\AA}/min and that from C3H6 was 1840 {\AA}/min. The deposition rate, dry etch rate and the amount of hydrocarbon contents of ACLs deposited from each carbon source were decreased with the increase of deposition temperature but extinction coefficient and density were increased with the increase of deposition temperature. We concluded that the variation behavior of the deposition characteristics and film properties of ACLs from C 6H12 with the increase of deposition temperature was the same as those of ACLs from C3H6. The high density and low dry etch rate of ACL from C6H12 can be explained by less hydrocarbon incorporation during deposition and these properties are more favorable for the dry etch hard mask application in semiconductor device fabrication. Crown",

keywords = "ACL, CH, Dry etch, Hard mask, PECVD, Semiconductor",

author = "Seungmoo Lee and Jaihyung Won and Jongsik Choi and Jihun Park and Yeonhong Jee and Hyeondeok Lee and Dongjin Byun",

year = "2011",

month = aug,

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doi = "10.1016/j.tsf.2011.04.077",

language = "English",

volume = "519",

pages = "6683--6687",

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T1 - Comparative study on the properties of amorphous carbon layers deposited from 1-hexene and propylene for dry etch hard mask application in semiconductor device manufacturing

AU - Lee, Seungmoo

AU - Won, Jaihyung

AU - Choi, Jongsik

AU - Park, Jihun

AU - Jee, Yeonhong

AU - Lee, Hyeondeok

AU - Byun, Dongjin

PY - 2011/8/1

Y1 - 2011/8/1

N2 - Amorphous carbon layers (ACLs) were prepared by plasma enhanced chemical vapor deposition (PECVD) from 1-hexene (C6H12) and propylene (C3H6) as a carbon source at different temperatures for dry etch hard mask of semiconductor devices manufacturing process. The deposition rate of ACL deposited at 550 °C from C 6H12 and C3H6 was 5050 Å/min and 6360 Å/min. Although the deposition rate of ACL deposited from C 6H6 was lower than that from C3H6, normalized deposition rate of ACL deposited from C6H12 was 1.64 times higher than that from C3H6. The relative amount of hydrocarbon contents measured by FTIR (Fourier transformation infrared) and TDS (thermal desorption spectroscopy) was decreased with the increase of deposition temperature. Raman results showed that the numbers and size of graphite cluster of ACLs deposited from each source were increased with the increase of deposition temperature. The extinction coefficient of ACL deposited at 550 °C from C6H12 was 0.51 and that from C3H6 was 0.48. The density of ACL deposited at 550 °C from C6H12 was 1.48 g/cm3 and that from C 3H6 was 1.45 g/cm3. The dry etching rate of ACL deposited at 550 °C from C6H12 was 1770 Å/min and that from C3H6 was 1840 Å/min. The deposition rate, dry etch rate and the amount of hydrocarbon contents of ACLs deposited from each carbon source were decreased with the increase of deposition temperature but extinction coefficient and density were increased with the increase of deposition temperature. We concluded that the variation behavior of the deposition characteristics and film properties of ACLs from C 6H12 with the increase of deposition temperature was the same as those of ACLs from C3H6. The high density and low dry etch rate of ACL from C6H12 can be explained by less hydrocarbon incorporation during deposition and these properties are more favorable for the dry etch hard mask application in semiconductor device fabrication. Crown

AB - Amorphous carbon layers (ACLs) were prepared by plasma enhanced chemical vapor deposition (PECVD) from 1-hexene (C6H12) and propylene (C3H6) as a carbon source at different temperatures for dry etch hard mask of semiconductor devices manufacturing process. The deposition rate of ACL deposited at 550 °C from C 6H12 and C3H6 was 5050 Å/min and 6360 Å/min. Although the deposition rate of ACL deposited from C 6H6 was lower than that from C3H6, normalized deposition rate of ACL deposited from C6H12 was 1.64 times higher than that from C3H6. The relative amount of hydrocarbon contents measured by FTIR (Fourier transformation infrared) and TDS (thermal desorption spectroscopy) was decreased with the increase of deposition temperature. Raman results showed that the numbers and size of graphite cluster of ACLs deposited from each source were increased with the increase of deposition temperature. The extinction coefficient of ACL deposited at 550 °C from C6H12 was 0.51 and that from C3H6 was 0.48. The density of ACL deposited at 550 °C from C6H12 was 1.48 g/cm3 and that from C 3H6 was 1.45 g/cm3. The dry etching rate of ACL deposited at 550 °C from C6H12 was 1770 Å/min and that from C3H6 was 1840 Å/min. The deposition rate, dry etch rate and the amount of hydrocarbon contents of ACLs deposited from each carbon source were decreased with the increase of deposition temperature but extinction coefficient and density were increased with the increase of deposition temperature. We concluded that the variation behavior of the deposition characteristics and film properties of ACLs from C 6H12 with the increase of deposition temperature was the same as those of ACLs from C3H6. The high density and low dry etch rate of ACL from C6H12 can be explained by less hydrocarbon incorporation during deposition and these properties are more favorable for the dry etch hard mask application in semiconductor device fabrication. Crown

KW - ACL

KW - CH

KW - Dry etch

KW - Hard mask

KW - PECVD

KW - Semiconductor

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Comparative study on the properties of amorphous carbon layers deposited from 1-hexene and propylene for dry etch hard mask application in semiconductor device manufacturing

Abstract

Keywords

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