Compare of SOI and SOS LIGBT structure for the thermal conductivity and self-heating characteristics

J. Y. Kim; S. W. Park; M. C. Jung; C. H. Kim; M. Y. Sung; D. H. Rhie; E. G. Kang; N. G. Kim; S. C. Kim

doi:10.1016/j.microrel.2004.07.043

Compare of SOI and SOS LIGBT structure for the thermal conductivity and self-heating characteristics

J. Y. Kim, S. W. Park, M. C. Jung, C. H. Kim, M. Y. Sung, D. H. Rhie, E. G. Kang, N. G. Kim, S. C. Kim

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The electrothermal simulation of high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simulations demonstrate that the thermal conductivity of the buried oxide is an importan parameter for the modeling of the thermal behavior of silicon-on-insulator (SOI) devices. In this paper, using for SOI LIGBT, we simulated electrothermal for device that insulator layer with SiQ and Al ₂O₃ at before and after latch up to measured the thermal conductivity and temperature distribution of whole device and verified that SOI LIGBT with Al₂O₃ insulator had good thermal conductivity and reliability.

Original language	English
Pages (from-to)	1479-1483
Number of pages	5
Journal	Microelectronics Reliability
Volume	44
Issue number	9-11 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.microrel.2004.07.043
Publication status	Published - 2004 Sept

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.microrel.2004.07.043

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title = "Compare of SOI and SOS LIGBT structure for the thermal conductivity and self-heating characteristics",

abstract = "The electrothermal simulation of high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simulations demonstrate that the thermal conductivity of the buried oxide is an importan parameter for the modeling of the thermal behavior of silicon-on-insulator (SOI) devices. In this paper, using for SOI LIGBT, we simulated electrothermal for device that insulator layer with SiQ and Al 2O3 at before and after latch up to measured the thermal conductivity and temperature distribution of whole device and verified that SOI LIGBT with Al2O3 insulator had good thermal conductivity and reliability.",

author = "Kim, {J. Y.} and Park, {S. W.} and Jung, {M. C.} and Kim, {C. H.} and Sung, {M. Y.} and Rhie, {D. H.} and Kang, {E. G.} and Kim, {N. G.} and Kim, {S. C.}",

year = "2004",

month = sep,

doi = "10.1016/j.microrel.2004.07.043",

language = "English",

volume = "44",

pages = "1479--1483",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

number = "9-11 SPEC. ISS.",

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TY - JOUR

T1 - Compare of SOI and SOS LIGBT structure for the thermal conductivity and self-heating characteristics

AU - Kim, J. Y.

AU - Park, S. W.

AU - Jung, M. C.

AU - Kim, C. H.

AU - Sung, M. Y.

AU - Rhie, D. H.

AU - Kang, E. G.

AU - Kim, N. G.

AU - Kim, S. C.

PY - 2004/9

Y1 - 2004/9

N2 - The electrothermal simulation of high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simulations demonstrate that the thermal conductivity of the buried oxide is an importan parameter for the modeling of the thermal behavior of silicon-on-insulator (SOI) devices. In this paper, using for SOI LIGBT, we simulated electrothermal for device that insulator layer with SiQ and Al 2O3 at before and after latch up to measured the thermal conductivity and temperature distribution of whole device and verified that SOI LIGBT with Al2O3 insulator had good thermal conductivity and reliability.

AB - The electrothermal simulation of high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simulations demonstrate that the thermal conductivity of the buried oxide is an importan parameter for the modeling of the thermal behavior of silicon-on-insulator (SOI) devices. In this paper, using for SOI LIGBT, we simulated electrothermal for device that insulator layer with SiQ and Al 2O3 at before and after latch up to measured the thermal conductivity and temperature distribution of whole device and verified that SOI LIGBT with Al2O3 insulator had good thermal conductivity and reliability.

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U2 - 10.1016/j.microrel.2004.07.043

DO - 10.1016/j.microrel.2004.07.043

M3 - Article

AN - SCOPUS:4544322743

SN - 0026-2714

VL - 44

SP - 1479

EP - 1483

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 9-11 SPEC. ISS.

ER -

Compare of SOI and SOS LIGBT structure for the thermal conductivity and self-heating characteristics

Abstract

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