Neutrons generated through charge-exchange 9Be (p; ni) 9Be reactions, with energies ranging from 0-33 MeV and an average energy of ∼9.8 MeV were used to irradiate conventional Schottky Ga2O3 rectifiers and NiO/Ga2O3 p-n heterojunction rectifiers to fluences of 1.1-2.2 × 1014 cm−2. The breakdown voltage was improved after irradiation for the Schottky rectifiers but was highly degraded for their NiO/Ga2O3 counterparts. This may be a result of extended defect zones within the NiO. After irradiation, the switching characteristics were degraded and irradiated samples of both types could not survive switching above 0.7 A or 400 V, whereas reference samples were robust to 1 A and 1 kV. The carrier removal rate in both types of devices was ∼45 cm−1. The forward currents and on-state resistances were only slightly degraded by neutron irradiation.
Bibliographical noteFunding Information:
The work at UF was performed as part of Interaction of Ionizing Radiation with Matter University Research Alliance (IIRM-URA), sponsored by the Department of the Defense, Defense Threat Reduction Agency under award HDTRA1–20–2–0002. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The work at UF was also supported by NSF DMR 1856662 (James Edgar). The work in Korea was supported by the Korea Institute for Advancement of Technology (KIAT) (P0012451, The Competency Development Program for Industry Specialist), the National Research Foundation of Korea (2020M3H4A3081799) and the K-Sensor Development Program (RS-2022-00154729), funded by the Ministry of Trade, Industry and Energy (MOTIE, Korea).
© 2023 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials