Comparison of different chemical vapor deposition methodologies for the fabrication of heterojunction boron-carbide diodes

D. Byun; B. R. Spady; N. J. Ianno; P. A. Dowben

doi:10.1016/0965-9773(95)00256-E

Comparison of different chemical vapor deposition methodologies for the fabrication of heterojunction boron-carbide diodes

D. Byun, B. R. Spady, N. J. Ianno, P. A. Dowben

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

We find that boron-carbide thin film diodes are insensitive to the morphology of the film. The semiconductor properties of the material do not appear to depend upon crystallite size and the extent of long range order. Boron-carbide diodes were fabricated from a single source compound, closo-1,2-dicarbadodecaborane (C₂B₁₀H₁₂), and binary source gases, nidopentaborane (B₅H₉) and methane (CH₄). Closo-1,2-dicarbadodecaborane was used in both synchrotron radiation induced chemical vapor deposition (SR-CVD) and plasma enhanced chemical vapor deposition (PECVD) to form boron-carbide films on n-type Si(111). A nidopentaborane and methane combination was also used in PECVD to form boron-carbide films on similar substrate for comparison. All of these boroncarbide films formed similar heterojunction diodes with n-type Si(111).

Original language	English
Pages (from-to)	465-471
Number of pages	7
Journal	Nanostructured Materials
Volume	5
Issue number	4
DOIs	https://doi.org/10.1016/0965-9773(95)00256-E
Publication status	Published - 1995 May
Externally published	Yes

Bibliographical note

Funding Information:
This work was supportebdy theR esearchIn stituteo f IndustriaSl ciencea ndT echnology (RlST/Korea), AFOSR, the Centerf or MaterialsR esearch and Analysis and the Center for Microelectronic and Optical Materials Research.

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

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10.1016/0965-9773(95)00256-E

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title = "Comparison of different chemical vapor deposition methodologies for the fabrication of heterojunction boron-carbide diodes",

abstract = "We find that boron-carbide thin film diodes are insensitive to the morphology of the film. The semiconductor properties of the material do not appear to depend upon crystallite size and the extent of long range order. Boron-carbide diodes were fabricated from a single source compound, closo-1,2-dicarbadodecaborane (C2B10H12), and binary source gases, nidopentaborane (B5H9) and methane (CH4). Closo-1,2-dicarbadodecaborane was used in both synchrotron radiation induced chemical vapor deposition (SR-CVD) and plasma enhanced chemical vapor deposition (PECVD) to form boron-carbide films on n-type Si(111). A nidopentaborane and methane combination was also used in PECVD to form boron-carbide films on similar substrate for comparison. All of these boroncarbide films formed similar heterojunction diodes with n-type Si(111).",

author = "D. Byun and Spady, {B. R.} and Ianno, {N. J.} and Dowben, {P. A.}",

note = "Funding Information: This work was supportebdy theR esearchIn stituteo f IndustriaSl ciencea ndT echnology (RlST/Korea), AFOSR, the Centerf or MaterialsR esearch and Analysis and the Center for Microelectronic and Optical Materials Research.",

year = "1995",

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doi = "10.1016/0965-9773(95)00256-E",

language = "English",

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journal = "Nanostructured Materials",

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AU - Byun, D.

AU - Spady, B. R.

AU - Ianno, N. J.

AU - Dowben, P. A.

N1 - Funding Information: This work was supportebdy theR esearchIn stituteo f IndustriaSl ciencea ndT echnology (RlST/Korea), AFOSR, the Centerf or MaterialsR esearch and Analysis and the Center for Microelectronic and Optical Materials Research.

PY - 1995/5

Y1 - 1995/5

N2 - We find that boron-carbide thin film diodes are insensitive to the morphology of the film. The semiconductor properties of the material do not appear to depend upon crystallite size and the extent of long range order. Boron-carbide diodes were fabricated from a single source compound, closo-1,2-dicarbadodecaborane (C2B10H12), and binary source gases, nidopentaborane (B5H9) and methane (CH4). Closo-1,2-dicarbadodecaborane was used in both synchrotron radiation induced chemical vapor deposition (SR-CVD) and plasma enhanced chemical vapor deposition (PECVD) to form boron-carbide films on n-type Si(111). A nidopentaborane and methane combination was also used in PECVD to form boron-carbide films on similar substrate for comparison. All of these boroncarbide films formed similar heterojunction diodes with n-type Si(111).

AB - We find that boron-carbide thin film diodes are insensitive to the morphology of the film. The semiconductor properties of the material do not appear to depend upon crystallite size and the extent of long range order. Boron-carbide diodes were fabricated from a single source compound, closo-1,2-dicarbadodecaborane (C2B10H12), and binary source gases, nidopentaborane (B5H9) and methane (CH4). Closo-1,2-dicarbadodecaborane was used in both synchrotron radiation induced chemical vapor deposition (SR-CVD) and plasma enhanced chemical vapor deposition (PECVD) to form boron-carbide films on n-type Si(111). A nidopentaborane and methane combination was also used in PECVD to form boron-carbide films on similar substrate for comparison. All of these boroncarbide films formed similar heterojunction diodes with n-type Si(111).

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DO - 10.1016/0965-9773(95)00256-E

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SN - 0965-9773

VL - 5

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IS - 4

ER -

Comparison of different chemical vapor deposition methodologies for the fabrication of heterojunction boron-carbide diodes

Abstract

Bibliographical note

ASJC Scopus subject areas

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