We find that boron-carbide thin film diodes are insensitive to the morphology of the film. The semiconductor properties of the material do not appear to depend upon crystallite size and the extent of long range order. Boron-carbide diodes were fabricated from a single source compound, closo-1,2-dicarbadodecaborane (C2B10H12), and binary source gases, nidopentaborane (B5H9) and methane (CH4). Closo-1,2-dicarbadodecaborane was used in both synchrotron radiation induced chemical vapor deposition (SR-CVD) and plasma enhanced chemical vapor deposition (PECVD) to form boron-carbide films on n-type Si(111). A nidopentaborane and methane combination was also used in PECVD to form boron-carbide films on similar substrate for comparison. All of these boroncarbide films formed similar heterojunction diodes with n-type Si(111).
Bibliographical noteFunding Information:
This work was supportebdy theR esearchIn stituteo f IndustriaSl ciencea ndT echnology (RlST/Korea), AFOSR, the Centerf or MaterialsR esearch and Analysis and the Center for Microelectronic and Optical Materials Research.
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics