Abstract
Back- and top-gate field-effect transistors (FETs) with channels composed of p-type Si nanowires were fabricated by a conventional photolithographic process and their electrical properties were characterized by conventional current-voltage (I - V) measurements. For a representative top-gate FET, the peak transconductance was enhanced from 2.24 to 72.2 nS, the field-effect mobility from 1.7 to 3.1 cm2/V s, and the Ion / Ioff ratio from 2.21 to 2.49×106, compared with those of a representative back-gate FET. The observed improvement of the electrical characteristics is mostly attributed to both the top-gate geometry and the relatively thin gate layer.
Original language | English |
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Pages (from-to) | 293-296 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 148 |
Issue number | 7-8 |
DOIs | |
Publication status | Published - 2008 Nov |
Bibliographical note
Funding Information:This work was supported by the National R&D Project for Nano Science and Technology (10022916-2006-22), the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), the “SystemIC2010” project of the Korea Ministry of Commerce, Industry and Energy, the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program (R0A-2005-000-10045-02 (2007)), the Medium-term Strategic Technology Development Program of Ministry of Commerce, Industry and Energy, and the Nano R&D Program (M10703000980-07M0300-98010).
Keywords
- A. Nanostructures
- A. Semiconductors
- B. Nanofabrications
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry