Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors

Changjoon Yoon; Jeongmin Kang; Donghyuk Yeom; Dong Young Jeong; Sangsig Kim

doi:10.1016/j.ssc.2008.09.011

Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors

Changjoon Yoon, Jeongmin Kang, Donghyuk Yeom, Dong Young Jeong, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Back- and top-gate field-effect transistors (FETs) with channels composed of p-type Si nanowires were fabricated by a conventional photolithographic process and their electrical properties were characterized by conventional current-voltage (I - V) measurements. For a representative top-gate FET, the peak transconductance was enhanced from 2.24 to 72.2 nS, the field-effect mobility from 1.7 to 3.1 cm²/V s, and the I_on / I_off ratio from 2.21 to 2.49×10⁶, compared with those of a representative back-gate FET. The observed improvement of the electrical characteristics is mostly attributed to both the top-gate geometry and the relatively thin gate layer.

Original language	English
Pages (from-to)	293-296
Number of pages	4
Journal	Solid State Communications
Volume	148
Issue number	7-8
DOIs	https://doi.org/10.1016/j.ssc.2008.09.011
Publication status	Published - 2008 Nov

Keywords

A. Nanostructures
A. Semiconductors
B. Nanofabrications

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/j.ssc.2008.09.011

Cite this

@article{ee5f79f739ef44ee980e5d1614f6c697,

title = "Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors",

abstract = "Back- and top-gate field-effect transistors (FETs) with channels composed of p-type Si nanowires were fabricated by a conventional photolithographic process and their electrical properties were characterized by conventional current-voltage (I - V) measurements. For a representative top-gate FET, the peak transconductance was enhanced from 2.24 to 72.2 nS, the field-effect mobility from 1.7 to 3.1 cm2/V s, and the Ion / Ioff ratio from 2.21 to 2.49×106, compared with those of a representative back-gate FET. The observed improvement of the electrical characteristics is mostly attributed to both the top-gate geometry and the relatively thin gate layer.",

keywords = "A. Nanostructures, A. Semiconductors, B. Nanofabrications",

author = "Changjoon Yoon and Jeongmin Kang and Donghyuk Yeom and Jeong, {Dong Young} and Sangsig Kim",

note = "Funding Information: This work was supported by the National R&D Project for Nano Science and Technology (10022916-2006-22), the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), the “SystemIC2010” project of the Korea Ministry of Commerce, Industry and Energy, the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program (R0A-2005-000-10045-02 (2007)), the Medium-term Strategic Technology Development Program of Ministry of Commerce, Industry and Energy, and the Nano R&D Program (M10703000980-07M0300-98010). ",

year = "2008",

month = nov,

doi = "10.1016/j.ssc.2008.09.011",

language = "English",

volume = "148",

pages = "293--296",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "7-8",

}

TY - JOUR

T1 - Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors

AU - Yoon, Changjoon

AU - Kang, Jeongmin

AU - Yeom, Donghyuk

AU - Jeong, Dong Young

AU - Kim, Sangsig

N1 - Funding Information: This work was supported by the National R&D Project for Nano Science and Technology (10022916-2006-22), the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), the “SystemIC2010” project of the Korea Ministry of Commerce, Industry and Energy, the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program (R0A-2005-000-10045-02 (2007)), the Medium-term Strategic Technology Development Program of Ministry of Commerce, Industry and Energy, and the Nano R&D Program (M10703000980-07M0300-98010).

PY - 2008/11

Y1 - 2008/11

N2 - Back- and top-gate field-effect transistors (FETs) with channels composed of p-type Si nanowires were fabricated by a conventional photolithographic process and their electrical properties were characterized by conventional current-voltage (I - V) measurements. For a representative top-gate FET, the peak transconductance was enhanced from 2.24 to 72.2 nS, the field-effect mobility from 1.7 to 3.1 cm2/V s, and the Ion / Ioff ratio from 2.21 to 2.49×106, compared with those of a representative back-gate FET. The observed improvement of the electrical characteristics is mostly attributed to both the top-gate geometry and the relatively thin gate layer.

AB - Back- and top-gate field-effect transistors (FETs) with channels composed of p-type Si nanowires were fabricated by a conventional photolithographic process and their electrical properties were characterized by conventional current-voltage (I - V) measurements. For a representative top-gate FET, the peak transconductance was enhanced from 2.24 to 72.2 nS, the field-effect mobility from 1.7 to 3.1 cm2/V s, and the Ion / Ioff ratio from 2.21 to 2.49×106, compared with those of a representative back-gate FET. The observed improvement of the electrical characteristics is mostly attributed to both the top-gate geometry and the relatively thin gate layer.

KW - A. Nanostructures

KW - A. Semiconductors

KW - B. Nanofabrications

UR - http://www.scopus.com/inward/record.url?scp=52949113806&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2008.09.011

DO - 10.1016/j.ssc.2008.09.011

M3 - Article

AN - SCOPUS:52949113806

SN - 0038-1098

VL - 148

SP - 293

EP - 296

JO - Solid State Communications

JF - Solid State Communications

IS - 7-8

ER -

Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this