Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors

Changjoon Yoon, Jeongmin Kang, Donghyuk Yeom, Dong Young Jeong, Sangsig Kim

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    7 Citations (Scopus)

    Abstract

    Back- and top-gate field-effect transistors (FETs) with channels composed of p-type Si nanowires were fabricated by a conventional photolithographic process and their electrical properties were characterized by conventional current-voltage (I - V) measurements. For a representative top-gate FET, the peak transconductance was enhanced from 2.24 to 72.2 nS, the field-effect mobility from 1.7 to 3.1 cm2/V s, and the Ion / Ioff ratio from 2.21 to 2.49×106, compared with those of a representative back-gate FET. The observed improvement of the electrical characteristics is mostly attributed to both the top-gate geometry and the relatively thin gate layer.

    Original languageEnglish
    Pages (from-to)293-296
    Number of pages4
    JournalSolid State Communications
    Volume148
    Issue number7-8
    DOIs
    Publication statusPublished - 2008 Nov

    Bibliographical note

    Funding Information:
    This work was supported by the National R&D Project for Nano Science and Technology (10022916-2006-22), the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), the “SystemIC2010” project of the Korea Ministry of Commerce, Industry and Energy, the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program (R0A-2005-000-10045-02 (2007)), the Medium-term Strategic Technology Development Program of Ministry of Commerce, Industry and Energy, and the Nano R&D Program (M10703000980-07M0300-98010).

    Keywords

    • A. Nanostructures
    • A. Semiconductors
    • B. Nanofabrications

    ASJC Scopus subject areas

    • General Chemistry
    • Condensed Matter Physics
    • Materials Chemistry

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