@inproceedings{19e4f03ccdbf46818b9c5b28b14ce592,
title = "Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors",
abstract = "Top-gate(TG) field effect transistors (FETs) with channels composed of Si nanowires were successfully fabricated in this study using photolithographic processes. In the TG FETs fabricated on oxidized Si substrates, the channels composed of Si nanowires with diameters of about 100 nm with natural SiO 2. The surfaces of the Si nanowires with natural SiO2 were covered with the gate metal to form TG FETs.",
keywords = "Comparison, FET, Nanowire, Si, Top-gate",
author = "Changjoon Yoon and Kihyun Keem and Jeongmin Kang and Jeong, {Dong Young} and Lee, {Moon Sook} and Yeo, {In Seok} and Chung, {U. In} and Moon, {Joo Tae} and Sangsig Kim",
note = "Funding Information: This work was supported by the National R&D Project for Nano Science and Technology (10022916-2006-22), the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), the “SystemIC2010” project of the Korea Ministry of Commerce, Industry and Energy, the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program (R0A-2005-000-10045-02 (2007)), the Medium-term Strategic Technology Development Program of Ministry of Commerce, Industry and Energy, and the Nano R&D Program (M10703000980-07M0300-98010).; 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC ; Conference date: 22-10-2006 Through 25-10-2006",
year = "2006",
doi = "10.1109/NMDC.2006.4388798",
language = "English",
isbn = "1424405408",
series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",
pages = "424--425",
booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",
}