Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors

Changjoon Yoon; Kihyun Keem; Jeongmin Kang; Dong Young Jeong; Moon Sook Lee; In Seok Yeo; U. In Chung; Joo Tae Moon; Sangsig Kim

doi:10.1109/NMDC.2006.4388798

Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors

Changjoon Yoon^*
, Kihyun Keem
, Jeongmin Kang
, Dong Young Jeong
, Moon Sook Lee
, In Seok Yeo
, U. In Chung
, Joo Tae Moon
, Sangsig Kim

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Top-gate(TG) field effect transistors (FETs) with channels composed of Si nanowires were successfully fabricated in this study using photolithographic processes. In the TG FETs fabricated on oxidized Si substrates, the channels composed of Si nanowires with diameters of about 100 nm with natural SiO ₂. The surfaces of the Si nanowires with natural SiO₂ were covered with the gate metal to form TG FETs.

Original language	English
Title of host publication	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages	424-425
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2006.4388798
Publication status	Published - 2006
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	1

Other

Other	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/Territory	Korea, Republic of
City	Gyeongju
Period	06/10/22 → 06/10/25

Bibliographical note

Funding Information:
This work was supported by the National R&D Project for Nano Science and Technology (10022916-2006-22), the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), the “SystemIC2010” project of the Korea Ministry of Commerce, Industry and Energy, the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program (R0A-2005-000-10045-02 (2007)), the Medium-term Strategic Technology Development Program of Ministry of Commerce, Industry and Energy, and the Nano R&D Program (M10703000980-07M0300-98010).

Keywords

Comparison
FET
Nanowire
Si
Top-gate

ASJC Scopus subject areas

Electrical and Electronic Engineering
General Materials Science

Access to Document

10.1109/NMDC.2006.4388798

Cite this

Yoon, C., Keem, K., Kang, J., Jeong, D. Y., Lee, M. S., Yeo, I. S., Chung, U. I., Moon, J. T., & Kim, S. (2006). Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 424-425). Article 4388798 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388798

Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors. / Yoon, Changjoon; Keem, Kihyun; Kang, Jeongmin et al.
2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 424-425 4388798 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yoon, C, Keem, K, Kang, J, Jeong, DY, Lee, MS, Yeo, IS, Chung, UI, Moon, JT & Kim, S 2006, Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388798, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 424-425, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388798

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abstract = "Top-gate(TG) field effect transistors (FETs) with channels composed of Si nanowires were successfully fabricated in this study using photolithographic processes. In the TG FETs fabricated on oxidized Si substrates, the channels composed of Si nanowires with diameters of about 100 nm with natural SiO 2. The surfaces of the Si nanowires with natural SiO2 were covered with the gate metal to form TG FETs.",

keywords = "Comparison, FET, Nanowire, Si, Top-gate",

author = "Changjoon Yoon and Kihyun Keem and Jeongmin Kang and Jeong, \{Dong Young\} and Lee, \{Moon Sook\} and Yeo, \{In Seok\} and Chung, \{U. In\} and Moon, \{Joo Tae\} and Sangsig Kim",

note = "Funding Information: This work was supported by the National R\&D Project for Nano Science and Technology (10022916-2006-22), the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), the “SystemIC2010” project of the Korea Ministry of Commerce, Industry and Energy, the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program (R0A-2005-000-10045-02 (2007)), the Medium-term Strategic Technology Development Program of Ministry of Commerce, Industry and Energy, and the Nano R\&D Program (M10703000980-07M0300-98010).; 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC ; Conference date: 22-10-2006 Through 25-10-2006",

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AU - Yoon, Changjoon

AU - Keem, Kihyun

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AU - Jeong, Dong Young

AU - Lee, Moon Sook

AU - Yeo, In Seok

AU - Chung, U. In

AU - Moon, Joo Tae

AU - Kim, Sangsig

N1 - Funding Information: This work was supported by the National R&D Project for Nano Science and Technology (10022916-2006-22), the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), the “SystemIC2010” project of the Korea Ministry of Commerce, Industry and Energy, the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program (R0A-2005-000-10045-02 (2007)), the Medium-term Strategic Technology Development Program of Ministry of Commerce, Industry and Energy, and the Nano R&D Program (M10703000980-07M0300-98010).

PY - 2006

Y1 - 2006

N2 - Top-gate(TG) field effect transistors (FETs) with channels composed of Si nanowires were successfully fabricated in this study using photolithographic processes. In the TG FETs fabricated on oxidized Si substrates, the channels composed of Si nanowires with diameters of about 100 nm with natural SiO 2. The surfaces of the Si nanowires with natural SiO2 were covered with the gate metal to form TG FETs.

AB - Top-gate(TG) field effect transistors (FETs) with channels composed of Si nanowires were successfully fabricated in this study using photolithographic processes. In the TG FETs fabricated on oxidized Si substrates, the channels composed of Si nanowires with diameters of about 100 nm with natural SiO 2. The surfaces of the Si nanowires with natural SiO2 were covered with the gate metal to form TG FETs.

KW - Comparison

KW - FET

KW - Nanowire

KW - Si

KW - Top-gate

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Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors

Abstract

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Bibliographical note

Keywords

ASJC Scopus subject areas

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