Comparison of electrical properties and deep traps in p Alx Ga1-xN grown by molecular beam epitaxy and metal organic chemical vapor deposition

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, A. M. Dabiran, P. P. Chow, A. M. Wowchak, In Hwan Lee, Jin Woo Ju, S. J. Pearton

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16 Citations (Scopus)

Abstract

The electrical properties, admittance spectra, microcathodoluminescence, and deep trap spectra of p -AlGaN films with an Al mole fraction up to 45% grown by both metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were compared. The ionization energy of Mg increases from 0.15 to 0.17 eV in p -GaN to 0.3 eV in 45% Al p -AlGaN. In p -GaN films grown by MBE and MOCVD and in MOCVD grown p -AlGaN, we observed additional acceptors with a concentration an order lower than that of Mg acceptors, with a higher hole capture cross section and an ionization energy close to that of Mg. For some of the MBE grown p -AlGaN, we also detected the presence of additional acceptor centers, but in that case the centers were located near the p -AlGaN layer interface with the semi-insulating AlGaN buffer and showed activation energies considerably lower than those of Mg.

Original languageEnglish
Article number073706
JournalJournal of Applied Physics
Volume106
Issue number7
DOIs
Publication statusPublished - 2009
Externally publishedYes

Bibliographical note

Funding Information:
The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (RFBR Grant No. 07-02-00408a) and by a grant from ICTS (Grant No. 3870). The work at CNU was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MOST) (Grant No. R01-2007-000-11177-0).

ASJC Scopus subject areas

  • General Physics and Astronomy

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