Comparison of electrical properties and deep traps in p Alx Ga1-xN grown by molecular beam epitaxy and metal organic chemical vapor deposition

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; E. A. Kozhukhova; A. M. Dabiran; P. P. Chow; A. M. Wowchak; In Hwan Lee; Jin Woo Ju; S. J. Pearton

doi:10.1063/1.3238508

Comparison of electrical properties and deep traps in p Al_x Ga_1-xN grown by molecular beam epitaxy and metal organic chemical vapor deposition

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, A. M. Dabiran, P. P. Chow, A. M. Wowchak, In Hwan Lee, Jin Woo Ju, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The electrical properties, admittance spectra, microcathodoluminescence, and deep trap spectra of p -AlGaN films with an Al mole fraction up to 45% grown by both metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were compared. The ionization energy of Mg increases from 0.15 to 0.17 eV in p -GaN to 0.3 eV in 45% Al p -AlGaN. In p -GaN films grown by MBE and MOCVD and in MOCVD grown p -AlGaN, we observed additional acceptors with a concentration an order lower than that of Mg acceptors, with a higher hole capture cross section and an ionization energy close to that of Mg. For some of the MBE grown p -AlGaN, we also detected the presence of additional acceptor centers, but in that case the centers were located near the p -AlGaN layer interface with the semi-insulating AlGaN buffer and showed activation energies considerably lower than those of Mg.

Original language	English
Article number	073706
Journal	Journal of Applied Physics
Volume	106
Issue number	7
DOIs	https://doi.org/10.1063/1.3238508
Publication status	Published - 2009
Externally published	Yes

Bibliographical note

Funding Information:
The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (RFBR Grant No. 07-02-00408a) and by a grant from ICTS (Grant No. 3870). The work at CNU was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MOST) (Grant No. R01-2007-000-11177-0).

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.3238508

Cite this

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Dabiran, A. M., Chow, P. P., Wowchak, A. M., Lee, I. H., Ju, J. W., & Pearton, S. J. (2009). Comparison of electrical properties and deep traps in p Al_x Ga_1-xN grown by molecular beam epitaxy and metal organic chemical vapor deposition. Journal of Applied Physics, 106(7), Article 073706. https://doi.org/10.1063/1.3238508

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title = "Comparison of electrical properties and deep traps in p Alx Ga1-xN grown by molecular beam epitaxy and metal organic chemical vapor deposition",

abstract = "The electrical properties, admittance spectra, microcathodoluminescence, and deep trap spectra of p -AlGaN films with an Al mole fraction up to 45% grown by both metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were compared. The ionization energy of Mg increases from 0.15 to 0.17 eV in p -GaN to 0.3 eV in 45% Al p -AlGaN. In p -GaN films grown by MBE and MOCVD and in MOCVD grown p -AlGaN, we observed additional acceptors with a concentration an order lower than that of Mg acceptors, with a higher hole capture cross section and an ionization energy close to that of Mg. For some of the MBE grown p -AlGaN, we also detected the presence of additional acceptor centers, but in that case the centers were located near the p -AlGaN layer interface with the semi-insulating AlGaN buffer and showed activation energies considerably lower than those of Mg.",

author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Kozhukhova, {E. A.} and Dabiran, {A. M.} and Chow, {P. P.} and Wowchak, {A. M.} and Lee, {In Hwan} and Ju, {Jin Woo} and Pearton, {S. J.}",

note = "Funding Information: The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (RFBR Grant No. 07-02-00408a) and by a grant from ICTS (Grant No. 3870). The work at CNU was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MOST) (Grant No. R01-2007-000-11177-0).",

year = "2009",

doi = "10.1063/1.3238508",

language = "English",

volume = "106",

journal = "Journal of Applied Physics",

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T1 - Comparison of electrical properties and deep traps in p Alx Ga1-xN grown by molecular beam epitaxy and metal organic chemical vapor deposition

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Kozhukhova, E. A.

AU - Dabiran, A. M.

AU - Chow, P. P.

AU - Wowchak, A. M.

AU - Lee, In Hwan

AU - Ju, Jin Woo

AU - Pearton, S. J.

N1 - Funding Information: The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (RFBR Grant No. 07-02-00408a) and by a grant from ICTS (Grant No. 3870). The work at CNU was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MOST) (Grant No. R01-2007-000-11177-0).

PY - 2009

Y1 - 2009

N2 - The electrical properties, admittance spectra, microcathodoluminescence, and deep trap spectra of p -AlGaN films with an Al mole fraction up to 45% grown by both metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were compared. The ionization energy of Mg increases from 0.15 to 0.17 eV in p -GaN to 0.3 eV in 45% Al p -AlGaN. In p -GaN films grown by MBE and MOCVD and in MOCVD grown p -AlGaN, we observed additional acceptors with a concentration an order lower than that of Mg acceptors, with a higher hole capture cross section and an ionization energy close to that of Mg. For some of the MBE grown p -AlGaN, we also detected the presence of additional acceptor centers, but in that case the centers were located near the p -AlGaN layer interface with the semi-insulating AlGaN buffer and showed activation energies considerably lower than those of Mg.

AB - The electrical properties, admittance spectra, microcathodoluminescence, and deep trap spectra of p -AlGaN films with an Al mole fraction up to 45% grown by both metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were compared. The ionization energy of Mg increases from 0.15 to 0.17 eV in p -GaN to 0.3 eV in 45% Al p -AlGaN. In p -GaN films grown by MBE and MOCVD and in MOCVD grown p -AlGaN, we observed additional acceptors with a concentration an order lower than that of Mg acceptors, with a higher hole capture cross section and an ionization energy close to that of Mg. For some of the MBE grown p -AlGaN, we also detected the presence of additional acceptor centers, but in that case the centers were located near the p -AlGaN layer interface with the semi-insulating AlGaN buffer and showed activation energies considerably lower than those of Mg.

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