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Comparison of electrical properties and deep traps in p Al
x
Ga
1-x
N grown by molecular beam epitaxy and metal organic chemical vapor deposition
A. Y. Polyakov
, N. B. Smirnov
, A. V. Govorkov
, E. A. Kozhukhova
, A. M. Dabiran
, P. P. Chow
, A. M. Wowchak
,
In Hwan Lee
, Jin Woo Ju
, S. J. Pearton
Research output
:
Contribution to journal
›
Article
›
peer-review
19
Citations (Scopus)
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Dive into the research topics of 'Comparison of electrical properties and deep traps in p Al
x
Ga
1-x
N grown by molecular beam epitaxy and metal organic chemical vapor deposition'. Together they form a unique fingerprint.
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Keyphrases
Electrical Properties
100%
Metal-organic Chemical Vapor Deposition (MOCVD)
100%
Molecular Beam Epitaxy
100%
Deep Traps
100%
P-AlGaN
100%
P-GaN
40%
Ionization Energy
40%
Additional Acceptor
40%
Activation Energy
20%
GaN Films
20%
Impedance Spectra
20%
GaN Buffer
20%
Layer Interface
20%
Capture Cross Section
20%
Semi-insulating
20%
AlGaN Layer
20%
AlGaN Film
20%
Mg Acceptor
20%
Al Mole Fraction
20%
Acceptor Centers
20%
Material Science
Metal-Organic Chemical Vapor Deposition
100%
Molecular Beam Epitaxy
100%
Film
50%
Activation Energy
25%
Engineering
Metal Organic Chemical Vapor Deposition
100%
Ionization Potential
50%
Activation Energy
25%
Mole Fraction
25%
Layer Interface
25%
Hole Capture Cross Section
25%
Immunology and Microbiology
Mole (Insectivora)
100%