Comparison of Interface State Density Characterization Methods for SiO 2/4H-SiC MOS Diodes

J. R. LaRoche; J. Kim; J. W. Johnson; B. Luo; B. S. Kang; R. Mehandru; Y. Irokawa; S. J. Pearton; G. Chung; F. Ren

doi:10.1149/1.1632872

Comparison of Interface State Density Characterization Methods for SiO ₂/4H-SiC MOS Diodes

J. R. LaRoche^*
, J. Kim
, J. W. Johnson
, B. Luo
, B. S. Kang
, R. Mehandru
, Y. Irokawa
, S. J. Pearton
, G. Chung
, F. Ren

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Four different methods for calculating interface state density in vertical SiO₂/4H-SiC metal-oxide semiconductor (MOS) capacitors were employed on the same samples. The Terman, ac, quasi-static, and Hi-Lo methods were used to extract surface state densities from the SiO₂/SiC interface. Surface state densities from 10¹¹ to 10¹² cm^-2 eV^-1 were obtained, depending on the method employed. The Hi-Lo method is particularly susceptible to underestimating the trap density if UV light is not used to empty all the deep-lying traps during measurement.

Original language	English
Pages (from-to)	G21-G24
Journal	Electrochemical and Solid-State Letters
Volume	7
Issue number	2
DOIs	https://doi.org/10.1149/1.1632872
Publication status	Published - 2004
Externally published	Yes

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Comparison of Interface State Density Characterization Methods for SiO 2/4H-SiC MOS Diodes",

abstract = "Four different methods for calculating interface state density in vertical SiO2/4H-SiC metal-oxide semiconductor (MOS) capacitors were employed on the same samples. The Terman, ac, quasi-static, and Hi-Lo methods were used to extract surface state densities from the SiO2/SiC interface. Surface state densities from 1011 to 1012 cm-2 eV-1 were obtained, depending on the method employed. The Hi-Lo method is particularly susceptible to underestimating the trap density if UV light is not used to empty all the deep-lying traps during measurement.",

author = "LaRoche, \{J. R.\} and J. Kim and Johnson, \{J. W.\} and B. Luo and Kang, \{B. S.\} and R. Mehandru and Y. Irokawa and Pearton, \{S. J.\} and G. Chung and F. Ren",

year = "2004",

doi = "10.1149/1.1632872",

language = "English",

volume = "7",

pages = "G21--G24",

journal = "Electrochemical and Solid-State Letters",

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TY - JOUR

T1 - Comparison of Interface State Density Characterization Methods for SiO 2/4H-SiC MOS Diodes

AU - LaRoche, J. R.

AU - Kim, J.

AU - Johnson, J. W.

AU - Luo, B.

AU - Kang, B. S.

AU - Mehandru, R.

AU - Irokawa, Y.

AU - Pearton, S. J.

AU - Chung, G.

AU - Ren, F.

PY - 2004

Y1 - 2004

N2 - Four different methods for calculating interface state density in vertical SiO2/4H-SiC metal-oxide semiconductor (MOS) capacitors were employed on the same samples. The Terman, ac, quasi-static, and Hi-Lo methods were used to extract surface state densities from the SiO2/SiC interface. Surface state densities from 1011 to 1012 cm-2 eV-1 were obtained, depending on the method employed. The Hi-Lo method is particularly susceptible to underestimating the trap density if UV light is not used to empty all the deep-lying traps during measurement.

AB - Four different methods for calculating interface state density in vertical SiO2/4H-SiC metal-oxide semiconductor (MOS) capacitors were employed on the same samples. The Terman, ac, quasi-static, and Hi-Lo methods were used to extract surface state densities from the SiO2/SiC interface. Surface state densities from 1011 to 1012 cm-2 eV-1 were obtained, depending on the method employed. The Hi-Lo method is particularly susceptible to underestimating the trap density if UV light is not used to empty all the deep-lying traps during measurement.

UR - https://www.scopus.com/pages/publications/12144286114

U2 - 10.1149/1.1632872

DO - 10.1149/1.1632872

M3 - Article

AN - SCOPUS:12144286114

SN - 1099-0062

VL - 7

SP - G21-G24

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 2

ER -

Comparison of Interface State Density Characterization Methods for SiO ₂/4H-SiC MOS Diodes

Abstract

ASJC Scopus subject areas

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