Comparison of Interface State Density Characterization Methods for SiO 2/4H-SiC MOS Diodes

  • J. R. LaRoche*
  • , J. Kim
  • , J. W. Johnson
  • , B. Luo
  • , B. S. Kang
  • , R. Mehandru
  • , Y. Irokawa
  • , S. J. Pearton
  • , G. Chung
  • , F. Ren
    • *Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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