Comparison of Interface State Density Characterization Methods for SiO 2/4H-SiC MOS Diodes

J. R. LaRoche, J. Kim, J. W. Johnson, B. Luo, B. S. Kang, R. Mehandru, Y. Irokawa, S. J. Pearton, G. Chung, F. Ren

Research output: Contribution to journal › Article › peer-review

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Earth and Planetary Sciences