Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

B. Luo; J. Kim; R. Mehandru; F. Ren; K. P. Lee; S. J. Pearton; A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; E. A. Kozhukhova; A. V. Osinsky; P. E. Norris

doi:10.1016/S0038-1101(02)00066-7

Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

B. Luo, J. Kim, R. Mehandru, F. Ren, K. P. Lee, S. J. Pearton, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, A. V. Osinsky, P. E. Norris

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

GaN/SiC and Al_0.25Ga_0.75 N/SiC heterojunction diodes were fabricated using Al/Ti for p-ohmic contact to the SiC and Ti/Al/Pt/Au for n-ohmic contact to the GaN and AlGaN. Annealing at 850 °C for 20 s (GaN) or 120 s (AlGaN) was required for achieving specific contact resistances in the 10^-6 Ωcm² range. The reverse breakdown voltage showed a negative temperature coefficient in both types of sample, with value ∼5.5 ± 2.5 × 10^-3 V/K. The I-V characteristics of both heterojunctions show evidence of tunneling via defect states.

Original language	English
Pages (from-to)	1345-1349
Number of pages	5
Journal	Solid-State Electronics
Volume	46
Issue number	9
DOIs	https://doi.org/10.1016/S0038-1101(02)00066-7
Publication status	Published - 2002 Sept
Externally published	Yes

Bibliographical note

Funding Information:
The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (Grant 01-02-17230). The work at UF was partially supported by UniRoyal OptoElectronics.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/S0038-1101(02)00066-7

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@article{ffb824cb552c4e6e8c34804c18f6a711,

title = "Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions",

abstract = "GaN/SiC and Al0.25Ga0.75 N/SiC heterojunction diodes were fabricated using Al/Ti for p-ohmic contact to the SiC and Ti/Al/Pt/Au for n-ohmic contact to the GaN and AlGaN. Annealing at 850 °C for 20 s (GaN) or 120 s (AlGaN) was required for achieving specific contact resistances in the 10-6 Ωcm2 range. The reverse breakdown voltage showed a negative temperature coefficient in both types of sample, with value ∼5.5 ± 2.5 × 10-3 V/K. The I-V characteristics of both heterojunctions show evidence of tunneling via defect states.",

author = "B. Luo and J. Kim and R. Mehandru and F. Ren and Lee, {K. P.} and Pearton, {S. J.} and Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Kozhukhova, {E. A.} and Osinsky, {A. V.} and Norris, {P. E.}",

note = "Funding Information: The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (Grant 01-02-17230). The work at UF was partially supported by UniRoyal OptoElectronics.",

year = "2002",

month = sep,

doi = "10.1016/S0038-1101(02)00066-7",

language = "English",

volume = "46",

pages = "1345--1349",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "9",

}

TY - JOUR

T1 - Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

AU - Luo, B.

AU - Kim, J.

AU - Mehandru, R.

AU - Ren, F.

AU - Lee, K. P.

AU - Pearton, S. J.

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Kozhukhova, E. A.

AU - Osinsky, A. V.

AU - Norris, P. E.

N1 - Funding Information: The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (Grant 01-02-17230). The work at UF was partially supported by UniRoyal OptoElectronics.

PY - 2002/9

Y1 - 2002/9

N2 - GaN/SiC and Al0.25Ga0.75 N/SiC heterojunction diodes were fabricated using Al/Ti for p-ohmic contact to the SiC and Ti/Al/Pt/Au for n-ohmic contact to the GaN and AlGaN. Annealing at 850 °C for 20 s (GaN) or 120 s (AlGaN) was required for achieving specific contact resistances in the 10-6 Ωcm2 range. The reverse breakdown voltage showed a negative temperature coefficient in both types of sample, with value ∼5.5 ± 2.5 × 10-3 V/K. The I-V characteristics of both heterojunctions show evidence of tunneling via defect states.

AB - GaN/SiC and Al0.25Ga0.75 N/SiC heterojunction diodes were fabricated using Al/Ti for p-ohmic contact to the SiC and Ti/Al/Pt/Au for n-ohmic contact to the GaN and AlGaN. Annealing at 850 °C for 20 s (GaN) or 120 s (AlGaN) was required for achieving specific contact resistances in the 10-6 Ωcm2 range. The reverse breakdown voltage showed a negative temperature coefficient in both types of sample, with value ∼5.5 ± 2.5 × 10-3 V/K. The I-V characteristics of both heterojunctions show evidence of tunneling via defect states.

UR - http://www.scopus.com/inward/record.url?scp=0036721684&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(02)00066-7

DO - 10.1016/S0038-1101(02)00066-7

M3 - Article

AN - SCOPUS:0036721684

SN - 0038-1101

VL - 46

SP - 1345

EP - 1349

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 9

ER -

Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

Abstract

Bibliographical note

ASJC Scopus subject areas

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