Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

B. Luo, J. Kim, R. Mehandru, F. Ren, K. P. Lee, S. J. Pearton, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, A. V. Osinsky, P. E. Norris

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


GaN/SiC and Al0.25Ga0.75 N/SiC heterojunction diodes were fabricated using Al/Ti for p-ohmic contact to the SiC and Ti/Al/Pt/Au for n-ohmic contact to the GaN and AlGaN. Annealing at 850 °C for 20 s (GaN) or 120 s (AlGaN) was required for achieving specific contact resistances in the 10-6 Ωcm2 range. The reverse breakdown voltage showed a negative temperature coefficient in both types of sample, with value ∼5.5 ± 2.5 × 10-3 V/K. The I-V characteristics of both heterojunctions show evidence of tunneling via defect states.

Original languageEnglish
Pages (from-to)1345-1349
Number of pages5
JournalSolid-State Electronics
Issue number9
Publication statusPublished - 2002 Sept
Externally publishedYes

Bibliographical note

Funding Information:
The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (Grant 01-02-17230). The work at UF was partially supported by UniRoyal OptoElectronics.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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