Abstract
GaN/SiC and Al0.25Ga0.75 N/SiC heterojunction diodes were fabricated using Al/Ti for p-ohmic contact to the SiC and Ti/Al/Pt/Au for n-ohmic contact to the GaN and AlGaN. Annealing at 850 °C for 20 s (GaN) or 120 s (AlGaN) was required for achieving specific contact resistances in the 10-6 Ωcm2 range. The reverse breakdown voltage showed a negative temperature coefficient in both types of sample, with value ∼5.5 ± 2.5 × 10-3 V/K. The I-V characteristics of both heterojunctions show evidence of tunneling via defect states.
Original language | English |
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Pages (from-to) | 1345-1349 |
Number of pages | 5 |
Journal | Solid-State Electronics |
Volume | 46 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2002 Sept |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry