Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

B. Luo; J. Kim; R. Mehandru; F. Ren; K. P. Lee; S. J. Pearton; A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; E. A. Kozhukhova; A. V. Osinsky; P. E. Norris

doi:10.1016/S0038-1101(02)00066-7

Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

B. Luo
, J. Kim
, R. Mehandru
, F. Ren
, K. P. Lee
, S. J. Pearton
, A. Y. Polyakov
, N. B. Smirnov
, A. V. Govorkov
, E. A. Kozhukhova
, A. V. Osinsky
, P. E. Norris

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

GaN/SiC and Al_0.25Ga_0.75 N/SiC heterojunction diodes were fabricated using Al/Ti for p-ohmic contact to the SiC and Ti/Al/Pt/Au for n-ohmic contact to the GaN and AlGaN. Annealing at 850 °C for 20 s (GaN) or 120 s (AlGaN) was required for achieving specific contact resistances in the 10^-6 Ωcm² range. The reverse breakdown voltage showed a negative temperature coefficient in both types of sample, with value ∼5.5 ± 2.5 × 10^-3 V/K. The I-V characteristics of both heterojunctions show evidence of tunneling via defect states.

Original language	English
Pages (from-to)	1345-1349
Number of pages	5
Journal	Solid-State Electronics
Volume	46
Issue number	9
DOIs	https://doi.org/10.1016/S0038-1101(02)00066-7
Publication status	Published - 2002 Sept
Externally published	Yes

Bibliographical note

Funding Information:
The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (Grant 01-02-17230). The work at UF was partially supported by UniRoyal OptoElectronics.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/S0038-1101(02)00066-7

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@article{ffb824cb552c4e6e8c34804c18f6a711,

title = "Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions",

abstract = "GaN/SiC and Al0.25Ga0.75 N/SiC heterojunction diodes were fabricated using Al/Ti for p-ohmic contact to the SiC and Ti/Al/Pt/Au for n-ohmic contact to the GaN and AlGaN. Annealing at 850 °C for 20 s (GaN) or 120 s (AlGaN) was required for achieving specific contact resistances in the 10-6 Ωcm2 range. The reverse breakdown voltage showed a negative temperature coefficient in both types of sample, with value ∼5.5 ± 2.5 × 10-3 V/K. The I-V characteristics of both heterojunctions show evidence of tunneling via defect states.",

author = "B. Luo and J. Kim and R. Mehandru and F. Ren and Lee, \{K. P.\} and Pearton, \{S. J.\} and Polyakov, \{A. Y.\} and Smirnov, \{N. B.\} and Govorkov, \{A. V.\} and Kozhukhova, \{E. A.\} and Osinsky, \{A. V.\} and Norris, \{P. E.\}",

note = "Funding Information: The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (Grant 01-02-17230). The work at UF was partially supported by UniRoyal OptoElectronics.",

year = "2002",

month = sep,

doi = "10.1016/S0038-1101(02)00066-7",

language = "English",

volume = "46",

pages = "1345--1349",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "9",

}

TY - JOUR

T1 - Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

AU - Luo, B.

AU - Kim, J.

AU - Mehandru, R.

AU - Ren, F.

AU - Lee, K. P.

AU - Pearton, S. J.

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Kozhukhova, E. A.

AU - Osinsky, A. V.

AU - Norris, P. E.

N1 - Funding Information: The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (Grant 01-02-17230). The work at UF was partially supported by UniRoyal OptoElectronics.

PY - 2002/9

Y1 - 2002/9

N2 - GaN/SiC and Al0.25Ga0.75 N/SiC heterojunction diodes were fabricated using Al/Ti for p-ohmic contact to the SiC and Ti/Al/Pt/Au for n-ohmic contact to the GaN and AlGaN. Annealing at 850 °C for 20 s (GaN) or 120 s (AlGaN) was required for achieving specific contact resistances in the 10-6 Ωcm2 range. The reverse breakdown voltage showed a negative temperature coefficient in both types of sample, with value ∼5.5 ± 2.5 × 10-3 V/K. The I-V characteristics of both heterojunctions show evidence of tunneling via defect states.

AB - GaN/SiC and Al0.25Ga0.75 N/SiC heterojunction diodes were fabricated using Al/Ti for p-ohmic contact to the SiC and Ti/Al/Pt/Au for n-ohmic contact to the GaN and AlGaN. Annealing at 850 °C for 20 s (GaN) or 120 s (AlGaN) was required for achieving specific contact resistances in the 10-6 Ωcm2 range. The reverse breakdown voltage showed a negative temperature coefficient in both types of sample, with value ∼5.5 ± 2.5 × 10-3 V/K. The I-V characteristics of both heterojunctions show evidence of tunneling via defect states.

UR - https://www.scopus.com/pages/publications/0036721684

U2 - 10.1016/S0038-1101(02)00066-7

DO - 10.1016/S0038-1101(02)00066-7

M3 - Article

AN - SCOPUS:0036721684

SN - 0038-1101

VL - 46

SP - 1345

EP - 1349

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 9

ER -

Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

Abstract

Bibliographical note

ASJC Scopus subject areas

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